The concept of matched devices is one of the most important features in analog circuit design, as most analog circuits operation rely on the similarity of electrical behavior of close devices [1]. However, in practice, the characteristics of designed matched transistors are slightly different. Therefore, the design of precise analog circuits requires studies into the matching behavior of device...

A full-band Monte Carlo (MC) device simulator has been used to study the effects of device scaling on hot electrons in different types of n-channel metal-oxide-semiconductor fieldeffect transistor (MOSFET) structures. Simulated devices include a conventional MOSFET with a single source/drain implant, a lightly-doped drain (LDD) MOSFET, a silicon-on-insulator (SOI) MOSFET, and a MOSFET built on ...

In this work, the radiation responses of 0.25 μm bulk transistors irradiated up to 300 krad are discussed. The electricals characteristics shown measured after irradiation at 95 K, 150 and K. transconductance improves significantly with total ionizing dose (TID) low temperature does not vary room temperature. impact incomplete ionization impurities introduced into Lightly Doped Drain extensions...

The double gate MOSFET architecture has been proposed as a possible solution to allow the scaling of MOSFETs to the sub-30 nm regime, particularly due to its inherent resistance to short-channel effects. The use of lightly doped, or even undoped, channels means that such devices should be inherently resistant to random dopant induced fluctuations which will be one of the major obstacles to MOSF...

We propose a temperature sensor employing a ring oscillator composed of poly-Si thin-film transistors (TFTs). Particularly in this research, we compare temperature sensors using TFTs with lightlydoped drain structure (LDD TFTs) and TFTs with offset drain structure (offset TFTs). First, temperature dependences of transistor characteristics are compared between the LDD and offset TFTs. It is conf...

Heterostructure field-effect transistor design criteria are proposed in this study. GaAs pseudomorphic high electron mobility transistors (pHEMTs) are extensively applied to radar satellite receipt dispatcher antenna, and cell phone. Devices for various doped type and different material heterostructure are simulated and analyzed. The δ-doped InGaP/InGaAs/GaAs pHEMT with high density of two dime...

In this comment we demonstrate that the inclusion of field-induced quantum confinement effects through appropriate discretization of conduction and valence bands refutes the suitability of a germanium electron–hole bilayer tunnel field-effect transistor with symmetrically arranged gates (Jeong et al 2015 Semicond. Sci. Technol. 30 035021). Delayed alignment of the first electron and hole energy...

Samples of GaAs 8-doped with beryllium have been studied with photoluminescence. With a lightly doped sample, (2 x 1016 Be atoms per m2) a spectral feature is observed which can be interpreted as caused by radiative recombinations between spatially non-confined conductionband electrons and acceptor-related holes forming a miniband system confined spatially to the &doped region. With higher dens...

Triple Material (TM) Double Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with high-k dielectric material as Gate Stack (GS) is presented in this paper. A lightly doped channel has been taken to enhance the device performance and reduce short channel effects (SCEs) such as drain induced barrier lowering (DIBL), sub threshold slope (SS), hot carrier effects (HCEs), channel...

In this paper, we apply our proposed computing algorithm for numerical solution of semiconductor device energy balance equation in carrier temperature simulation. This robust simulation based on finite volume discertization scheme and monotone iterative algorithm is successfully developed and implemented for intrinsic investigation of submicron MOSFET device. Simulation results demonstrate MOSF...