The efficacy of laser annealing for the thermal annealing of nanocrystalline gold nanowires is evaluated. Continuous laser illumination at 532 nm, focused to a 0.5 μm diameter spot, was rastered perpendicular to the axis of nanocrystalline gold nanowire at ∼2 kHz. This rastered beam was then scanned down the nanowire at velocities from 7 to 112 nm/s. The influence on the electrical resistance o...

To date, the silver nanowire-based conductor has been widely used for flexible/stretchable electronics due to its several advantages. The optical nanowire annealing process has also received interest as an alternative annealing process to the Ag nanowire (NW)-based conductor. In this study, we present an analytical investigation on the phenomena of the Ag NWs’ junction and welding properties un...

We found that the extinction coefficient of ion-beam-sputtered titanium dioxide films first decreased with increasing annealing temperature then increased drastically when annealing temperature was increased above ~200 degrees C for 24 h of annealing time. The decreasing extinction coefficient with annealing temperature was attributed to a reduction in absorption owing to oxidation of the film ...

An analysis of extended defects generated during annealing by pulsed excimer laser radiation in silicon crystals implanted with Ge ions is presented. The investigation was performed by means of two complementary methods: the interference-polarizing microscopy and the Lang X-ray transmission topography. The existence of extended defects was revealed. It has been stated that the distribution of t...

Silicon nanocrystals (Si-nc) embedded in a SiO2 matrix is a promising system for siliconbased photonics. We studied optical and structural properties of Si-rich silicon oxide SiOx (x < 2) films annealed in a furnace at temperatures up to 1200 °C and containing Si-nc. The measured optical properties of SiOx films are compared with the values estimated by using the effective medium approximation ...

The electron beam induced current (EBIC) technique was used to characterize a 32 lm thick hydrogenated amorphous silicon n–i–p diode deposited on top of an ASIC, containing several channels of active feedback pre-amplifiers (AFP) with peaking time of 5 ns. The homogeneity of the sample together with the edge effects induced by the unevenness of the ASIC substrate were studied with low doses of ...

Fabrication and laser operation of proton-implanted Ti:sapphire buried channel waveguides is reported for the first time to our knowledge. Without any postimplantation annealing of the structures, continuous laser operation near 780 nm was demonstrated at room temperature at an absorbed pump power threshold of 230 mW. Single-transverse-mode laser emission was observed with measured beam propaga...

the modulation response, relative intensity noise and frequency noise characteristics of qd lasers are investigated theoretically, in presence of an additional optical pumping. it is revealed that the modulation response of qd laser enhances under additional optical beam. by small signal analysis of the carriers&apos; and photons&apos; rates, it is proposed that by injecting excess carriers to ...

Crystallization of amorphous silicon (a-Si) using excimer laser annealing (ELA) has been reported since 1994 by Watanabe group. It is known as the best method to fabricate a good poly-silicon because it can heat the film up to the melting point and, at the same time no thermal damage occur into the glass substrate (Carluccio et al., 1997; Matsumura and Oh, 1999). ELA technique is widely used to...