نتایج جستجو برای: kieran egan

تعداد نتایج: 568  

Journal: :Gadelica: A Journal of Modern Irish Studies 1913

Journal: :Occupational medicine 2002
J A Hunter

It is quite remarkable what an academic appointment can do for one’s career. Ever since Kieran became occupational physician at Linbridge University, it has been hard to pick up a medical journal without seeing his name, or more disturbing, his picture peering out from the pages of some of the more tabloid publications. At first, it was the odd book review and then letter to the editor, as he t...

Journal: :CoRR 2017
Vincent Huang Tobias Ley Martha Vlachou-Konchylaki Wenfeng Hu

Applying deep reinforcement learning (RL) on real systems suffers from slow data sampling. We propose an enhanced generative adversarial network (EGAN) to initialize an RL agent in order to achieve faster learning. The EGAN utilizes the relation between states and actions to enhance the quality of data samples generated by a GAN. Pre-training the agent with the EGAN shows a steeper learning cur...

Journal: :Bioinformatics 2010
Jesse Paquette Taku A. Tokuyasu

UNLABELLED Exploratory Gene Association Networks (EGAN) is a Java desktop application that provides a point-and-click environment for contextual graph visualization of high-throughput assay results. By loading the entire network of genes, pathways, interactions, annotation terms and literature references directly into memory, EGAN allows a biologist to repeatedly query and interpret multiple ex...

2016
Alex Lidow

DRIVING eGaN® FETS When considering gate drive requirements, the three most important parameters for eGaN FETs are (1) the maximum allowable gate voltage, (2) the gate threshold voltage, and (3) the “body diode” voltage drop. The maximum allowable gate-source voltage for an eGaN FET of 6 V is low in comparison with traditional silicon. Secondly, the gate threshold is also low compared to most p...

2013
Alex Lidow Johan Strydom

DriviNG eGaN® FETs When considering gate drive requirements, the three most important parameters for eGaN FETs are (1) the maximum allowable gate voltage, (2) the gate threshold voltage, and (3) the “body diode” voltage drop. The maximum allowable gate-source voltage for an eGaN FET of 6 V is low in comparison with traditional silicon. Secondly, the gate threshold is also low compared to most p...

Journal: :Library Trends 2004
Jonathan Furner

Margaret Egan (1905–59) taught at the Graduate Library School of the University of Chicago (1946–55) and at the School of Library Science at Western Reserve University in Cleveland, Ohio (1955–59). With her colleague Jesse Shera, Egan wrote “Foundations of a Theory of Bibliography” for Library Quarterly in 1952; this article marked the fi rst appearance of the term “social epistemology.” After ...

Journal: :The Journal of Asian Studies 1978

2011
Claire E. Egan Dermot Barnes-Holmes

Claire E. Egan is now at The Hong Kong Institute for Education. These experiments were completed as part of the doctoral work submitted by Claire E. Egan to the Department of Psychology at NUI, Maynooth. We would like to thank Dr. Chris Ninness for his invaluable comments on an earlier draft of this manuscript. Correspondence concerning the study should be addressed to Claire E. Egan, Departmen...

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