Introduction: As the movement of trained health care personnel out of developing countries in search of greener pastures continues, an end is not yet in view to the weak health systems created by imbalances and costs associated with brain drain in affected countries. The objective of this study is to determine knowledge and attitude of health care workers in Lagos State towards brain drain Meth...

The integrity and issues related performance associated with scaling Si MOSFET channel length promotes research in new device SOI, double gate and GAA MOSFET. In this paper, we pr novel characteristic of horizontal rectangular gate MOSFETs with dual metal of gate we obtained using SILVACO TCAD tools. We will also exhibit some simulation results we obtained relating to the influence of some para...

The objective of this paper is to simulate static I-V and dynamic characteristics of an appropriated and recessed nGaN/AlxGa1-xN/GaN high electron mobility (HEMT). Using SILVACO TCAD device simulation, and optimized technological parameters; we calculate the drain-source current (IDS) as a function of the drain-source voltage (VDS) for different values of the gatesource voltage (VGS), and the d...

a new output structure for class e power amplifier (pa) is proposed in this paper. a series lc resonator circuit, tuned near the second harmonic of the operating frequency is added to the output circuit. this resonator causes low impedance at the second harmonic. the output circuit is designed to shape the switch voltage of the class e amplifier and lower the voltage stress of the transistor. t...

Free AccessImportant Keywordshttps://doi.org/10.14220/9783737013444.259SectionsPDF/EPUB ToolsAdd to favoritesDownload CitationsTrack Citations ShareShare onFacebookTwitterLinkedInRedditEmail About Previous chapter Next FiguresReferencesRelatedDetails Download book coverOsnabrücker Studien zur Jüdischen und Christlichen Bibel.Volume 8 1st editionISBN: 978-3-8471-1344-7 eISBN: 978-3-7370-1344-4Hi...

In this paper, we have examined the effect of parameter variation on the electrical characteristics of a device. The rate of change in the electrical parameters such as cut off frequency, breakdown voltage and drain saturation current as a function of the process parameters is investigated Keywords—LDMOS, Process Parameters, characteristics, parameter variation.