Department of Internal Medicine, Faculty of Medicine, Universitas Pelita Harapan/Siloam Hospital, Lippo Village, Jl. Siloam No.6, Tangerang, Indonesia Mochtar Riady Institute for Nanotechnology, Jl. Boulevard Jenderal Sudirman 1668, Lippo Village, Tangerang, Banten, Indonesia Klinik Hati Prof. Ali Sulaiman, Jl. Cilamaya No. 46, Jakarta Pusat, Indonesia Department of Physiology, Faculty of Medic...

The high temperature dependence of junctionless (JL) gate-all-around (GAA) poly-Si thin-film transistors (TFTs) with 2-nm-thick nanosheet channel is compared with that of JL planar TFTs. The variation of SS with temperature for JL GAA TFTs is close to the theoretical value (0.2 mV/dec/K), owing to the oxidation process to form a 2-nm-thick channel. The bandgap of 1.35 eV in JL GAA TFTs by fitti...

Postgraduate Program in Medicine, Faculty of Medicine, Hasanuddin University, Jl. Perintis Kemerdekaan Km.10, Makassar, Indonesia Medistra Hospital, Jl. Jendral Gatot Subroto Kav. 59, Jakarta, Indonesia Department of Physiology, Faculty of Medicine, Hasanuddin University, Jl. Perintis Kemerdekaan Km.10, Makassar, Indonesia Faculty of Medicine, University of Tarumanagara, Jl. Letjen S. Parman No...

Most of the scientific research today has become data-intensive [1]. Vast amounts of data are being collected from different sources by researchers in all the areas we can imagine, ranging from basic sciences like nuclear physics (Large Hadron Collider is a recent example), astronomy, biology to more applied areas like web mining, natural language processing, biomedical applications, etc. This ...

A comparative study of the drain breakdown phenomena in junctionless (JL) and inversion mode (IM) pchannel MOSFETs has been investigated experimentally with different VGS, channel widths, and VSUB. In order to explain the dependence of drain breakdown voltages (BVDS) on VGS, 3-D device simulation has been also performed. When the device is turned ON, the BVDS is larger in JL than IM transistors...