نتایج جستجو برای: integrated optoelectronic circuit

تعداد نتایج: 371760  

1995
D. Scott Scott Wilkinson Myunghee Lee Nan Marie Jokerst Martin A. Brooke

This paper presents a three-dimensional, highly parallel, optically interconnected system to process high-throughput stream data such as images. The vertical optical interconnections are realized using integrated optoelectronic devices operating at wavelengths to which silicon is transparent. These throughwafer optical signals are used to vertically optically interconnect stacked silicon circui...

Journal: :Optics express 2013
Bruno Romeira Julien Javaloyes Charles N Ironside José M L Figueiredo Salvador Balle Oreste Piro

We demonstrate, experimentally and theoretically, excitable nanosecond optical pulses in optoelectronic integrated circuits operating at telecommunication wavelengths (1550 nm) comprising a nanoscale double barrier quantum well resonant tunneling diode (RTD) photo-detector driving a laser diode (LD). When perturbed either electrically or optically by an input signal above a certain threshold, t...

2012
José Figueiredo Bruno Romeira Thomas Slight Charles Ironside

Nowadays, most communication networks such as local area networks (LANs), metropolitan area networks (MANs), and wide area networks (WANs) have replaced or are about to replace coaxial cable or twisted copper wire with fiber optical cables. Light-wave communication systems comprise a transmitter based on a visible or near-infrared light source, whose carrier is modulated by the information sign...

Journal: :journal of advances in computer research 0

in this paper a novel design of all-optical half-subtractor based on nonlinear directional coupler is proposed. by using four waveguides and appropriately adjusting the refractive indices and selecting the proper length of waveguides, halfsubtractor function can be obtained. the operation of this function is simulated by rsoft cad-layout (beamprop) simulator. the simulation results confirm the ...

2006

Founded in 1991, Digital Optics Corporation began as a micro-optics developer and is now a leading supplier of diffractive and micro-optical components. In the late 1990s, Digital Optics recognized that the labor-intensive integration and packaging of its components in the optoelectronic industry was driving customer costs higher and was leading manufacturers to seek inexpensive, overseas labor...

2008
J. M. L. Figueiredo B. Romeira T. J. Slight L. Wang

Introduction: Negative resistance elements are important components in oscillator circuits and form the basis of many other nonlinear circuits. Resonant tunnelling diodes (RTDs) have attracted much attention owing to their wide-bandwidth negative differential resistance (NDR), up to hundreds of GHz [1]. Because RTDs can be easily integrated in electronic and optoelectronic circuits, the applica...

Journal: :Optics express 2014
Jin-Sung Youn Myung-Jae Lee Kang-Yeob Park Holger Rücker Woo-Young Choi

We investigate signal-to-noise ratio (SNR) characteristics of an 850-nm optoelectronic integrated circuit (OEIC) receiver fabricated with standard 0.25-µm SiGe bipolar complementary metal-oxide-semiconductor (BiCMOS) technology. The OEIC receiver is composed of a Si avalanche photodetector (APD) and BiCMOS analog circuits including a transimpedance amplifier with DC-balanced buffer, a tunable e...

1999
K. D. Li A. S. Hou

An ultrafast GaAs Schottky photodiode is monolithically integrated with a microwave detector. By using this new optoelectronic circuit.in place of a nonlinear crystal in an optical correlation setup, the high-speed photodiode can measure laser pulse durations without using expensive sampling oscilloscopes. Key advantages are that this circuit works over a broad wavelength range and at low peak ...

2003
R. Vandersmissen D. Schreurs S. Vandenberghe G. Carchon G. Borghs

In this paper a demonstrator oscillator circuit integrated in a MCM-D on glass technology is presented. The active device of the oscillator is a thin-film Ge (germanium) -based MHEMT. The MHEMT is embedded in the bottom dielectric layer of the MCM-D. The combination of passive MCM-D technology and MHEMTs on Ge allows for efficient semi-monolithic integration of active devices and realisation of...

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