The coefficient of thermal expansion (CTE) and the thermal conductivity are the two key parameters to consider when selecting a particular substrate material for a die bonding process. We will discuss here a model to determine the substrate material giving the best chip reliability expectations for GaAs and InP laser chips. In that respect, a comparison of the thermo-mechanical stresses induced...

Uniform arrays of nano-sized pore produced in porous alumina were transferred into InP substrates by inductively coupled plasma reactive ion etching (ICP-RIE). We observed a significant enhancement in the light output from InP substrate with nanohole arrays on the surface. Photoluminescence intensity of triangular arrays of air cylinders on InP substrate showed an enhancement up to 3 times comp...

Group IIIA phosphide nanocrystalline semiconductors are of great interest among the important inorganic materials because of their large direct band gaps and fundamental physical properties. Their physical properties are exploited for various potential applications in high-speed digital circuits, microwave and optoelectronic devices. Compared to II-VI and I-VII semiconductors, the IIIA phosphid...

III-V compound multijunction solar cells enable ultrahigh efficiency performance in designs where subcells with high material quality and high internal quantum efficiency can be employed. However the optimal multijunction cell bandgap sequence cannot be achieved using lattice-matched compound semiconductor materials. Most current compound semiconductor solar cell design approaches are focused o...

This paper gives a status report on the conventional approaches to linear colliders at DESY, KEK, SLAC and INP-Protvino in the Sand X-Band regime. Critical topics are reviewed and a discussion of global issues such as future R&D requirements is included.

Indium belongs to Group III A in the periodic table and it is mainly used in the making of thin-film transistor liquid crystal displays (LCDs) for television screens, portable computer screens, pocket telephone displays and video monitors, mainly through the utilization of indiumtin oxide (ITO). ITO is a sintered alloy containing a large portion of indium oxide and a small portion of tin oxide....

Strained-layer superlattices (SL's) made up of alternate GaP and InP layers constitute a system where the strain is symmetrized when grown on GaAs substrates. While both components present a large lattice mismatch to GaAs ( —3.6% GaP, +3.8% InP) giving rise to large biaxial deformations in the individual layers, the net value of strain in the whole SL is very small, thus favoring their stabilit...

Monolithically InP-based photonic integrated circuits, where more than two semiconductor optoelectronic devices are integrated in a single InP substrate, have long history of research and development. Representatives of these InP-based photonic integrated circuits are, electroabsorption modulator integrated distributed feedback laser diodes (DFB LDs) (Kawamura et al., 1987, H. Soda et al., 1990...

Indium phosphide quantum dots (InP QD) are a promising alternative to traditional QD materials that contain toxic heavy elements such as lead and cadmium. However, InP obtained from colloidal synthesis often plagued by poor photoluminescence yields (PL-QYs). In order improve the PL-QY of QD, number post-synthetic treatments have been devised. Recently, it has shown post-synthetically treated wi...