نتایج جستجو برای: inp material
تعداد نتایج: 367987 فیلتر نتایج به سال:
Northrop Grumman Space Technology (NGST) has recently initiated process development for fabricating 0.1 μm InGaAs/InAlAs/InP High Electron Mobility Transistor (HEMT) MMICs on 100 mm InP substrates. Successful development of this process will further reduce costs for InP HEMT MMICs and rival those of GaAs-based HEMT MMICs, including GaAs-based metamorphic HEMT technology, with superior performan...
We present a concept for the realization of InGaAs/InP micromachined thermoelectric sensors. The advantages of InGaAs lattice matched to InP combine perfectly for this application. The high selectivity of wet chemical etching of InP against InGaAs is ideally suited for surface bulk micromachining. Thermoelectric InGaAs sensors profit from the high thermal resistivity combined with high electric...
The work focuses on understanding and characterization of the thin-film vapor-liquid-solid (TFVLS) growth technique as a low-cost process technology for III-V thin film solar cells on metal/glass substrates. In the last review period, we have focused on understanding and controlling the nucleation events of TF-VLS InP. Furthermore, optoelectronic characterization of the grown InP has been perfo...
The growth and structural properties of self-assembled InP quantum dots are presented and discussed, together with their optical properties and associated carrier dynamics. The QDs are grown using gas-source molecular-beam epitaxy in and on the two materials In0.48Ga0.52P (lattice matched to GaAs) and GaP. Under the proper growth conditions, formation of InP dots via the StranskiKrastanow mecha...
We report a systematic study of thermal effects in photonic crystal membrane lasers based on line-defect cavities. Two material platforms, InGaAsP and InP, are investigated experimentally and numerically. Lasers with quantum dot layers embedded in an InP membrane exhibit lasing at room temperature under CW optical pumping, whereas InGaAsP membranes only lase under pulsed conditions. By varying ...
The thin-film vapor−liquid−solid (TF-VLS) growth technique presents a promising route for high quality, scalable, and cost-effective InP thin films for optoelectronic devices. Toward this goal, careful optimization of material properties and device performance is of utmost interest. Here, we show that exposure of polycrystalline Zn-doped TF-VLS InP to a hydrogen plasma (in the following referre...
Photoconductive (PC) terahertz (THz) emitters are often limited by ohmic loss and Joule heating-as these effects can lead to thermal runaway and premature device breakdown. To address this, the proposed work introduces PC THz emitters based on textured InP materials. The enhanced surface recombination and decreased charge-carrier lifetimes of the textured InP materials reduce residual photocurr...
We present InP photodiodes fabricated on GaP substrate with unique drift dominated design, which can build an electric field throughout the active region by varying the doping concentration. The InP/GaP photodiodes have been grown, processed and characterized. The excellent spectral response, higher than 75% internal quantum efficiency in UV and visible range, demonstrates the robustness of our...
We present continuous wave laser emission in a photonic crystal microcavity operating at 1.5 microm at room temperature. The structures have been fabricated in an InP slab including a single layer of self-assembled InAs/InP quantum wires (QWrs) as active material. Laser emission in air suspended membranes with thresholds of effective optical pump power of 22 microW and quality factors up to 550...
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