نتایج جستجو برای: hopping conductivity
تعداد نتایج: 58007 فیلتر نتایج به سال:
The growth processes of Tetragonal single crystals of solid solution (Cd0.6Zn0.32Mn0.08)3As2, space group P42/nmc, has been synthesized by Bridgman method. Conductivity and magnetoresistance of (Cd0.6Zn0.32Mn0.08)3As2 were measured in the range 1.6K to 300K and in magnetic field up to 25 T. Crossover from Mott variable-range-hopping conductivity mechanism close to helium temperatures. In this w...
The c-axis quasiparticle conductivity shows different behavior depending on the nature of the interlayer coupling. For coherent coupling with a constant hopping amplitude t⊥, the conductivity at zero frequency and zero temperature σ(0, 0) depends on the direction of the magnetic field, but it does not for angle-dependent hopping t(φ) which removes the contribution of the nodal quasiparticles. F...
We report the structural and transport properties of the Bi-substituted Co2MnO4 multiferroic materials. Samples synthesized using the solid state reaction route with the composition BixCo2−xMnO4 0x 0.3 exhibit a single phase behavior with a cubic spinel structure space group Fd3m . The lattice parameter was found to increase with the Bi substitution. The dc-conductivity studies reveal that all ...
The effect of extrinsic traps on the charge transport in organic semiconductors has been investigated. An analytical model describing hopping transport with traps is formulated on the basis of percolation theory. The results show that the presence of a trap distribution with energy offset and width different from that of the intrinsic density of states does not change the basic phenomenology of...
016408-1 Combined first-principles and experimental investigations reveal the underlying mechanism responsible for a drastic change of the conductivity (by 10 orders of magnitude) following hydrogen annealing and UV irradiation in a transparent oxide, 12CaO 7Al2O3, found by Hayashi et al. [Nature (London) 419, 462 (2002).] The charge transport associated with photoexcitation of an electron from...
A simple two-band model is suggested explaining recently reported unusual features for hopping magnetoresistance and the metal-insulator transition in 2D structures. The model implies that the conductivity is dominated by the upper Hubbard band (D-band). Experimental studies of hopping magnetoresistance for Si δ-doped GaAs/AlGaAs heterostructure give additional evidences for the model.
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