We report the 250 °C operation of a diamond-based monolithic bidirectional switch. A normally-ON double gate deep depletion MOSFET was fabricated with 400 nm p-type channel boron doping [NA-ND] = 2.3 × 1017 cm?3 and an Al2O3 oxide thickness 50 nm. The Ist IIIrd quadrants transistor characteristics are successfully measured by controlling conductivity both gates separately, clear ON OFF state. t...

Ion-conducting memristors comprised of the layered chalcogenide materials Ge2Se3/SnSe/Ag are described. The memristor, termed a self-directed channel (SDC) device, can be classified as a generic memristor and can tolerate continuous high temperature operation (at least 150 °C). Unlike other chalcogenide-based ion conducting device types, the SDC device does not require complicated fabrication s...

This Letter presents distributed Bragg reflector (DBR) fiber lasers for high-temperature operation at 750°C. Thermally regenerated fiber gratings were used as the feedback elements to construct an erbium-doped DBR fiber laser. The output power of the fiber laser can reach 1 mW at all operating temperatures. The output power fluctuation tested at 750°C was 1.06% over a period of 7 hours. The the...

Investigation of the performance of quantum dot infrared photodetectors QDIPs in comparison to other types of infrared photodetectors operated near room temperature is presented. The model is based on fundamental performance limitations enabling a direct comparison between different infrared material technologies. It is assumed that the performance is due to thermal generation in the active reg...

Terahertz quantum cascade lasers (QCLs) with a broadband gain medium could play an important role for sensing and spectroscopy since then distributed-feedback schemes could be utilized to produce laser arrays on a single semiconductor chip with wide spectral coverage. QCLs can be designed to emit at two different frequencies when biased with opposing electrical polarities. Here, terahertz QCLs ...

We experimentally demonstrated that nanoribbon field-effect transistors can be used for stable high-temperature applications. The on-current level of the nanoribbon FETs decreases at elevated temperatures due to the degradation of the electron mobility. We propose two methods of compensating for the variation of the current level with the temperature in the range of 25-150°C, involving the appl...