We propose and investigate the intrinsically thinnest transistor concept: a monolayer ballistic heterojunction bipolar based on lateral heterostructure of transition metal dichalcogenides. The device is thinner than Field Effect Transistor because it does not need top or bottom gate, since transport controlled by electrochemical potential base electrode. As typical transistors, collector curren...

In this paper we present an analytical model to optimize the thermal and electrical layout for multilayer structure electronic devices through the solution to the non-linear 3-D heat equation. The thermal solution is achieved by the Kirchhoff transform and the 2-D Fourier transform. The model is general and can be easily applied to a large variety of integrated devices, provided that their stru...

We demonstrate that GaAs-based HBTs with very low base currents at both low and high injection levels can be achieved using either Al0.35Ga0.65As or InGaP in the emitter with the proper optimization of structure and growth. We observe an order of magnitude reduction in space charge recombination current as the Al composition, and hence the energy-gap, of the emitter increases from 25% (1.77 eV)...

The interaction between transferred-electron effect and base widening under transient conditions in III-V heterojunction bipolar transistors is considered. Modification of the collector field profile with an n+ doping spike is shown to cause a time delay for the onset of Kirk effect creating conditions for the inception of charge instabilities. Numerical simulations suggest the possibility of s...

ABSTRACT Space and other DoD systems require high reliability components, which will survive a long mission life. Heterojunction Bipolar Transistors (HBT’s) are key components in these systems. NGST has developed a robust system for long term testing of HBT’s at very high current densities (200-300 kA/cm). This test measures current enhanced degradation that may not appear with standard high te...

Modern communications require high linearity for power amplifiers. GaAs heterojunction bipolar transistor (HBT) based amplifiers are proven to have high efficiency, good linearity, ruggedness, and low cost. In this paper we report on an improved linearity GaAs HBT device achieved through a novel engineered Ft curve. The novelty of the solution relies on the flatness of the Ft curve with device ...