We have fabricated 30 nm In0.7Ga0.3As Inverted-Type HEMTs with outstanding logic performance, scalability and high frequency characteristics. The motivation for this work is the demonstration of reduced gate leakage current in the Inverted HEMT structure. The fabricated devices show excellent Lg scalability down to 30 nm. Lg = 30 nm devices have been fabricated with exhibit gm = 1.27 mS/μm, S =...

あらまし GaN HEMTの高周波高出力の一例として X帯 50 W級,100 W級,並びに Ku帯 50 W級 GaN HEMT の技術課題と解決方法,特性例について述べる.GaN HEMT は出力電力密度が高い一方で,その発熱 密度も高い.発熱量を抑えるためには高い効率,そのために高い利得が必要である.X-Ku 帯において利得を上 げるために,フィールドプレートを用いない電流コラプス低減対策,Via-hole を用いたソース接地を適用した. その結果,X 帯 100 W 級 GaN HEMT では,飽和出力電力 51.1 dB(129 W),最大電力付加効率は 47.8%を 得た.Ku帯 50 W級 GaN HEMTでは,飽和出力電力 47.3 dBm(53 W),最大電力付加効率は 33.2%を得た. 最後にいくつかの実用例を紹介した. キーワード GaN HEMT,電力付加効...

A InGaP/InGaAs/GaAs dual channel pseudomorphic HEMT (DCPHEMT) with interesting triple doped sheets having gate length 800nm is modeled and simulated by using 2-dimensional simulation package ATLAS from Silvaco. Different DC and microwave performances of the above device are analyzed and investigated to judge the potential of the device for highperformance digital device applications. Due to the...

A simple Physics based drain current model of AlGaN/GaN High Electron Mobility Transistor model (HEMT) is developed. The Proposed is useful for fast and accurate circuit simulation and analysis of Microwave and DC Characteristics. This model includes Channel length modulation and Velocity Saturation effect. Derived model results are compared with 1μm gate Al0.50Ga0.50N/GaN HEMT structure and 0....

A high electron mobility transistor (HEMT) is used with a single-electron transistor (SET) to measure single electrons tunnelling into individual InGaAs quantum dots. The SET detects a change in location of an electron once it tunnels from an underlying n-doped layer into a quantum dot lying in an intermediate layer. A HEMT on the He3 stage with the SET is used to extend the measurement bandwid...

It is expected that the high electron mobility transistor (HEMT) using gallium nitride (GaN) as its wide band gap semiconductor will be applied in diverse, green ICT systems because of its high efficiency. The GaN HEMT utilizes high-density two-dimensional electron gas (2DEG) accumulated in the boundary layer between GaN and AlGaN through their piezoelectric effect and natural polarization effe...

4-bit high speed R-2R Ladder Digital to Analog Converter (DAC) design is presented in this paper. The high speed DAC design uses a high speed InGaAs/GaAs HEMT device in its summer block. This paper justifies the use of HEMT devices for high speed converter applications. A detailed analysis of the DAC parameters and errors is presented. DAC performance up to 20GHz is presented and it shows very ...

Significant advances in the developmcmt of HEMT technology have resulted in high performance cryogenic, 1.,NAs whose noise temperatures arc within an order of magnitude of the quantum noise limit (hv/k). Key to the identification of optimum HEMT structures at cryogenic {temperatures is the clevelopmcnt of on-wafer noise and device parameter extraction techniques.

To investigate the effects of both the drain and gate bias voltages on the performance of GaN HEMT oscillator, a 0.25 μm GaN-on-SiC HEMT oscillator is presented in this paper. Utilizing the designed oscillator, the trade-off between phase noise and output power is effectively investigated at the circuit level. As a result, the designed oscillator can provide low phase noise and medium output po...

In this study, we report on a demonstration of hydrogen sensing at low temperature using SnO2 functionalized AlGaN/GaN high electron mobility transistors (HEMT). The SnO2 dispersion was synthesized via a hydrothermal method and selectively deposited on the gate region of a HEMT device through a photolithography process. The high electron sheet carrier concentration of nitride HEMTs provides an ...