We investigate the performance of bends and splitters in graphene nanoribbon waveguides. Although the graphene waveguides are lossy themselves, we show that bends and splitters do not induce any additional loss provided that the nanoribbon width is sub-wavelength. We use transmission line theory to qualitatively interpret the behavior observed in our simulation. Our results pave a promising way...

Topological insulators are bulk insulators that possess robust chiral conducting states along their interfaces with normal insulators. A tremendous research effort has recently been devoted to topological insulator-based heterostructures, in which conventional proximity effects give rise to a series of exotic physical phenomena. Here we establish the potential existence of topological proximity...

We report the pH response enhancement of the electrolyte-gated graphene field effect transistors by controllably introducing edge defects. An average improvement of pH response from 4.2 to 24.6 mV/pH has been observed after downscaling the pristine graphene into graphene nanoribbon arrays with electron beam lithography (EBL) and oxygen plasma. We attribute the improved pH response in graphene n...

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Graphene has significant potential for application in electronics, but cannot be used for effective field-effect transistors operating at room temperature because it is a semimetal with a zero bandgap. Processing graphene sheets into nanoribbons with widths of less than 10 nm can open up a bandgap that is large enough for room-temperature transistor operation, but nanoribbon devices often have ...

In this study, first-principles time-dependent density functional theory calculations were used to demonstrate the possibility to modulate the amplitude of the optical electric field (E-field) near a semiconducting graphene nanoribbon. A significant enhancement of the optical E-field was observed 3.34 Å above the graphene nanoribbon sheet, with an amplitude modulation of approximately 100 fs, w...

Semi-analytical model for carbon nanotube and graphene nanoribbon transistors

Graphene nanostructures, where quantum confinement opens an energy gap in the band structure, hold promise for future electronic devices. To realize the full potential of these materials, atomic-scale control over the contacts to graphene and the graphene nanostructure forming the active part of the device is required. The contacts should have a high transmission and yet not modify the electron...

Optical gradient forces between monolayer infinite-width graphene sheets as well as single-mode graphene nanoribbon pairs of graphene surface plasmons (GSPs) at mid-infrared frequencies were theoretically investigated. Although owing to the strongly enhanced optical field, the normalized optical force, fn, can reach 50 nN/μm/mW, which is the largest fn as we know, the propagation loss is also l...

Computational study of heterojunction graphene nanoribbon tunneling transistors with p-d orbital tight-binding method" (2014).