The germanium nitride and InP nanowires were grown using the pyrolytic decomposition products of hydrazine (N2H4), which was containing 3 mol.% H2O. In a separate set of experiments the quartz microbalance was used to study the interaction of water containing hydrazine with Ge sample in the temperature range of 450-650°C. It was established that up to 500°C only water molecules interact with Ge...

Here we present for the first time a study of the photoresistive properties and dynamics of ordered, high-density arrays of germanium nanowire photoresistors. Germanium is a wellknown semiconducting material with an indirect bandgap, Eg, of approximately 0.66 eV (temperature T = 300 K) and has been widely used for the fabrication of photodetectors, radiation detectors, charged particle and phot...

Herein, we describe the controlled growth of 1 dimensional germanium nanostructures from high aspect ratio nanowires (>10 microns in length) to shorter aspect nanorods (100 nm in length) via a simple pyrolysis method. The synthetic route involves the thermal decomposition of selected germanium precursors by dropping a solution in a high boiling point solvent directly onto a pre-heated Si wafer ...

The electrically operated phase-change random access memory (PRAM) features faster write/read, improved endurance, and much simpler fabrication as compared with the traditional transistor-based nonvolatile semiconductor memories. Low-dimensional phase-change materials in nanoscale dimensions offer advantages over their bulk or thin-film counterpart in several aspects such as reduced programmabl...

A simple solution synthesis of germanium (Ge0) nanowires under mild conditions (<400 degrees C and 1 atm) was demonstrated using germanium 2,6-dibutylphenoxide, Ge(DBP)2 (1), as the precursor where DBP = 2,6-OC6H3(C(CH3)3)2. Compound 1, synthesized from Ge(NR2)2 where R = SiMe3 and 2 equiv of DBP-H, was characterized as a mononuclear species by single-crystal X-ray diffraction. Dissolution of 1...

In this work, germanium nanowires rendered fully amorphous via xenon ion irradiation have been annealed within a transmission electron microscope to induce crystallization. During annealing crystallites appeared in some whilst others remained amorphous. Remarkably, even when nucleation occurred, large sections of the though few embedded phase were formed at minimum 200 °C above temperature for ...

Existing models of electrical contacts are often inapplicable at the nanoscale because there are significant differences between nanostructures and bulk materials arising from unique geometries and electrostatics. In this Review, we discuss the physics and materials science of electrical contacts to carbon nanotubes, semiconductor nanowires and graphene, and outline the main research and develo...

Chemically derived nanowire materials have attracted much attention because of their interesting geometries, properties, and potential applications.[1±3] Various methods have been developed for synthesizing semiconducting nanowires including laser ablation,[2,3] physical vapor deposition under high temperatures,[3±7] and solvothermal growth under high pressures and moderate temperatures.[3,8±10...

The intrinsic reactivity of curved nanoscale germanium surfaces, under carefully controlled anodic etch conditions, is exploited to produce intricate three-dimensional helical patterns. Such structures, retaining crystalline Ge character and yielding strong visible emission, demonstrate a feature spacing of a periodic nature that correlates with their measured width.