Heterojunction Si-Ge nanowires (NWs) have potential applications such as field effect transistors [1]. Knowledge of the active dopant concentration and distribution, and resultant built-in potential across the Si-Ge p-n junction under biasing conditions is important for improving device performance. Off-axis electron holography is an effective method to measure electrostatic potential with nano...

The aim of this research is studying the effects of Ge-doped on CO adsorption on the outer and inner surfaces of (6, 0) zigzag model of boron nitride nanotube (BNNTs) by using DFT theory. For this purpose, eight models of CO adsorption on the surfaces of BNNTs are considered. At first step, all structures were optimized at B3LYP and 6-31G (d) standard base set and then the electronic structure,...

Abbreviations 2D, 3D 2-dimensional, 3-dimensional CZT cadmium zinc telluride EKG electric signal from the heart FBP filtered backprojection FOV field-of-view GE General Electric Ge(Li) germanium detector doped with lithium MLEM maximum likelihood expectation maximization NaI(Tl) sodium iodine doped with thallium NM nuclear medicine OSEM ordered subset expectation maximization PET positron emiss...

We present a method of fabricating Ge-doped SiO2 fibers with corrugations around their full circumference for a desired length in the longitudinal direction. The procedure comprises three steps: hydrogenation of Ge-doped SiO2 fibers to increase photosensitivity, recording of Bragg gratings with ultraviolet light to achieve modulation of refractive index, and chemical etching. Finite-length, rad...

In this paper, we study band-to-band and intersubband (ISB) characteristics of Si- and Ge-doped GaN/AlN heterostructures (planar and nanowires) structurally designed to absorb in the short-wavelength infrared region, particularly at 1.55 μm. Regarding the band-to-band properties, we discuss the variation of the screening of the internal electric field by free carriers, as a function of the dopi...

We report a Ge-on-Si photodetector without doped Ge or Ge-metal contacts. Despite the simplified fabrication process, the device shows a responsivity of 1.14 A/W at -4 V reverse bias and 1.44 A/W at -12V, at 1550 nm wavelength. Dark current is less than 1µA under both bias conditions. We also demonstrate open eye diagrams at 40Gb/s.

We have reported the thermoluminescence (TL) response of five different diameters ~120, 241, 362, 483, and 604 μm of 6 mol percent Ge-doped optical fibres. The perfomance of the Ge-doped optical fibre are compared with commercially available TLD-100 chips (LiF:Mg,Ti) in terms of their sensitivity and minimum detectable dose (MDD). The irradiation was performed using X-ray machine (Model ISO ‘Na...

We report a simple and efficient method for replacing germanium atoms in deltahedral Ge(9)(4-) clusters with Sb or Bi. While reactions of Ge(9)(4-) with EPh(3) (E = Sb, Bi) at room temperature are known to produce mono- and disubstituted clusters [Ph(2)E-Ge(9)-Ge(9)-EPh(2)](4-) and [Ph(2)E-Ge(9)-EPh(2)](2-), respectively, at elevated temperatures or with sonication they result in exchange of Ge...

We demonstrate the p-type doping of Ge nanowires (NWs) and p-n junction arrays in a scalable vertically aligned structure with all processing performed below 400 °C. These structures are advantageous for the large scale production of parallel arrays of devices for nanoelectronics and sensing applications. Efficient methods for the oxide encapsulation, chemical mechanical polishing and cleaning ...

Electrical and physical properties of a metal-oxide-semiconductor [MOS] structure using atomic layer-deposited high-k dielectrics (TiO2/Al2O3) and epitaxial GaAs [epi-GaAs] grown on Ge(100) substrates have been investigated. The epi-GaAs, either undoped or Zn-doped, was grown using metal-organic chemical vapor deposition method at 620°C to 650°C. The diffusion of Ge atoms into epi-GaAs resulted...