We propose a method for dual supply voltage digital design to reduce energy consumption without violating the given performance requirement. Although the basic idea of placing low voltage gates on non-critical paths is well known, a new two-step procedures does it so more efficiently. First, given a circuit and its nominal single supply voltage, we find a suitable value for a lower second suppl...

A programming technique for controlling the floating gates (FG) in ultra low-voltage (ULV) floating-gate circuits is presented. Simple ultra low-voltage floatinggate current scaling and level shifting circuits are discussed. The current scaling and level shifting are accomplished using only minimum sized transistors and floating capacitors. Floating-gate current multiplier and divider circuits ...

Abstract: We present the optimization of the manufacturing process of the 5nm bulk-FinFET technology by using the 3D process and device simulations. In this paper, bysimulating the manufacturing processes, we focus on optimizing the manufacturingprocess to improve the drive current of the 5nm FinFET. The improvement of drivecurrent is one of the most important issues in ...

a new output structure for class e power amplifier (pa) is proposed in this paper. a series lc resonator circuit, tuned near the second harmonic of the operating frequency is added to the output circuit. this resonator causes low impedance at the second harmonic. the output circuit is designed to shape the switch voltage of the class e amplifier and lower the voltage stress of the transistor. t...

Temperature dependent measurements have been used to examine transport mechanisms and energy band structure in MOS devices. In this study, a comparison between high-k HfO2 dielectrics and conventional SiO2 dielectrics is made to investigate dielectric specific thermally activated mechanisms. Temperature dependent measurements on large area n/pMOSFETs composed of SiO2 and HfO2/SiO2 gate dielectr...

KCNE β-subunits assemble with and modulate the properties of voltage-gated K+ channels. In the heart, KCNE1 associates with the α-subunit KCNQ1 to generate the slowly activating, voltage-dependent potassium current (IKs) in the heart that controls the repolarization phase of cardiac action potentials. By contrast, in epithelial cells from the colon, stomach, and kidney, KCNE3 coassembles with K...

A one-dimensional model of the polysilicon-gate-oxide-bulk structure is presented in order to analyze the implanted gate MOS-devices. The influence of the ionized impurity concentration in the polysilicon-gate near the oxide and the charge at the polysilicon-oxide interface on the flat-band voltage, threshold voltage, inversion layer charge and the quasi-static C-V characteristic is quantitativ...

this paper proposes a low voltage (±0.55v supply voltage) low power (44.65µw) high common mode rejection ratio (cmrr) differential amplifier (d.a.) with rail to rail input common mode range (icmr), constant transconductance (gm) and enhanced frequency performance. its high performance is obtained using a simple negative averaging method so that it cancels out the common mode input signals at th...

The electrical properties characterization of AlGaN/GaN based Modulation Doped Field Effect Transistor (MODFET) is reported. Threshold voltage Vth=-3.87 V, maximum saturation current Idss=122.748 mA, gate-source capacitance at zero gate voltage and also maximum gate-source capacitance= 0.161753 pF/μm, gate-source capacitance=0.157233 pF/μm at Id=0.3Idss, trans-conductance (gm) = 31.3806 mS/mm a...