Computer simulation of high-speed Gallium Arsenide Charge Coupled Devices is performed using an established twodimensional semiconductor device simulation program. The effect of active layer thickness on the Charge Transfer Efficiency (CTE) and the dynamic range is investigated using different active layers. Also, different gate architectures are compared for optimum dynamic range and compatibi...

This paper investigated the wear mechanism of diamond during atomic force microscope (AFM) tip-based nanomachining Gallium Arsenide (GaAs) using molecular dynamics (MD) simulations. The elastic–plastic deformation at apex tip was observed Meanwhile, a transition from its initial cubic lattice structure sp3 hybridization to graphite sp2 revealed. Graphitization was, therefore, found be dominant ...

Superlattices of cubic gallium nitride (GaN) and gallium arsenide (GaAs) were grown on GaAs(1 0 0) substrates using metalorganic vapor phase epitaxy (MOVPE) with dimethylhydrazine (DMHy) as nitrogen source. Structures grown at low temperatures with varying layer thicknesses were characterized using high resolution X-ray diffraction and atomic force microscopy. Several growth modes of GaAs on Ga...

Recent experiments at the Stanford Linear Accelerator Center (SLAC) [l] have demonstrated that the photoemitted number of electrons from a cesium-activated gallium arsenide (GaAs) crystal saturates at high incident flux, becoming insensitive to the incident photon flux at high intensity. This article offers a physical model that attempts to explain this phenomenon. A comparison of experimental ...

Progress in processing low-loss quasi-phase-matched gallium arsenide crystals makes it possible to benefit from their excellent nonlinear properties in practical mid-infrared sources. This paper addresses both crystal growth aspects and the most recent device demonstrations. ©2012 Optical Society of America OCIS codes: (190.4400) Nonlinear optics, materials; (140.3070) Infrared and far-infrared...

Positron Annihilation techniques have been used to investigate two important defects that occur naturally in semi-insulating (SI) Gallium arsenide. The growth and assessment of SI GaAs and the application of PA to defect analysis of this important material are reported.

Efficient near-infrared detection of specific DNA with single nucleotide polymorphism selectivity is important for diagnostics and biomedical research. Herein, we report the use of gallium arsenide (GaAs) as a sensing platform for probing DNA immobilization and targeting DNA hybridization, resulting in ∼8-fold enhanced GaAs photoluminescence (PL) at ∼875 nm. The new signal amplification strateg...

Photoluminescence Study of Gallium Arsenide, Aluminum Gallium Arsenide, and Gallium Antimonide Thin Films Grown by Metalorganic Chemical Vapor Deposition

Although semiconductors such as silicon (Si), gallium arsenide (GaAs), and gallium phosphide (GaP) have band gaps that make them efficient photoanodes for solar fuel production, these materials are unstable in aqueous media. We show that TiO2 coatings (4 to 143 nanometers thick) grown by atomic layer deposition prevent corrosion, have electronic defects that promote hole conduction, and are suf...