Heterostructure field-effect transistor design criteria are proposed in this study. GaAs pseudomorphic high electron mobility transistors (pHEMTs) are extensively applied to radar satellite receipt dispatcher antenna, and cell phone. Devices for various doped type and different material heterostructure are simulated and analyzed. The δ-doped InGaP/InGaAs/GaAs pHEMT with high density of two dime...

Heavily Si-doped (5 X 10” cmm3) low-temperature GaAs (LT-GaAs) sandwiched between undoped LT-GaAs layers has been grown by molecular beam epitaxy and annealed to 900 “C. Transmission electron microscopy showed that within the first few minutes of annealing an accumulation of As precipitates formed near each Si-doped/undoped LT-GaAs interface. With further annealing Si segregation to As precipit...

Spatial charge distribution for biased semiconductors fundamentally differs from metals since they can allow inhomogeneous charge distributions due to penetration of the electric field, as observed in the classical Schottky junctions. Similarly, the electrostatics of the dielectric/semiconductor interface can lead to a carrier depletion or accumulation in the semiconductor side when under appli...

In this paper, we report on the structural and optical properties of n-type Si-doped p-type Be-doped GaAs(1−x)Bix thin films grown by molecular beam epitaxy (311)B GaAs substrates with nominal Bi content x=5.4%. Similar samples without were also for comparison purposes (n-type GaAs). X-ray diffraction, micro-Raman at room temperature, photoluminescence (PL) measurements as a function temperatur...

Infrared response of multiple-component free-carrier plasma in heavily doped p-type GaAs" (2001).

–We investigate spin-dependent interband tunnelling in a ferromagnetic (Ga,Mn)As/ GaAs Zener diode. The ferromagnetic pn-junction is fabricated with a Mn-doped p-type GaAs layer on top of a nonmagnetic n-type GaAs substrate. When both sides of the junction are heavily doped, a large magnetic-field–dependent tunnelling effect can be seen at low temperatures in the measured current-voltage (I-V )...

–We investigate spin-dependent interband tunnelling in a ferromagnetic (Ga,Mn)As/ GaAs Zener diode. The ferromagnetic pn-junction is fabricated with a Mn-doped p-type GaAs layer on top of a nonmagnetic n-type GaAs substrate. When both sides of the junction are heavily doped, a large magnetic-field–dependent tunnelling effect can be seen at low temperatures in the measured current-voltage (I-V )...

Electron spin resonance of donors in GaAs has been observed through optical orientation and detection of spins. GaAs samples doped below the metal–insulator transition were studied. The resonance linewidth increases as the concentration of donors is reduced, due to the dependence of the T2 * spin lifetime on correlation effects between donor electrons. The linewidth of the lowest doped sample (...

We demonstrate active voltage-controlled spectral tuning of mid-infrared plasmonic structures. Extraordinary optical transmission gratings were fabricated on n-doped GaAs epilayers with a HfO2 gate dielectric between the grating and the doped semiconductor. The permittivity of the GaAs was tuned by depleting charge carriers below the top grating gate upon the application of a reverse bias to th...

The growth of high mobility two-dimensional hole gases (2DHGs) using GaAs-GaAlAs heterostructures has been the subject of many investigations. However, despite many efforts hole mobilities in Be-doped structures grown on (100) GaAs substrate remained considerably lower than those obtained by growing on (311)A oriented surface using silicon as p-type dopant. In this study we will report on the p...