The synthesis of gallium nitride nanowires (GaN NWs) by plasma enhanced chemical vapor deposition (PECVD) are successfully demonstrated in this work. The simple and green synthesis route is to introduce gallium oxide (Ga2O3) and nitrogen (N2) for the growth of nanowires. The prepared GaN nanowires have a single crystalline wurtzite structure, which the length of some nanowires is up to 20 μm, w...

This paper presents the growth and characterization of three-dimensional structures using metal-organic (or organometallic) chemical precursors like M(CH3)3, where M is a metal. Their morphology depends principally on growth temperature and conditions at the surface of the substrate. These 3D structures can be separated into two classes: i) one with (Ga, Al, In) metallic alloys shaped as sphere...

Active research in nanostructured materials aims to explore new paths for improving electronic device characteristics. In the field of gas sensors, those based on metal oxide single nanowires exhibit excellent sensitivity and can operate at extremely low power consumption, making them a highly promising candidate novel generation portable devices. The mix two different oxides same nanowire furt...

In the last few years nanostructure ZnO is being intensively investigated from the growth control, structural and physical characterization, to device performance. There are now increasing interests in a wide range of ZnO-based ternary compound nanostructures offering even larger possibilities. These compounds can be useful as multi-color light-emitting device, sensors, transparent electrodes, ...

Nanocrystalline undoped b-Ga2O3 and Dy -doped b-Ga2O3 were prepared through a Pechini-type sol-gel process. All the samples began to crystallize at 600°C, and the crystallinity increased with the increase of annealing temperatures until 1000°C. Field emission-scanning electron microscopy study revealed that the b-Ga2O3 :Dy 31 sample is composed of aggregated particles with sizes ranging from 40...

Gallium nitride (GaN) nanostructures were successfully synthesized by the nitridation of the electrochemically deposited gallium oxide (Ga2O3) through the utilization of a so-called ammoniating process. Ga2O3 nanostructures were firstly deposited on Si substrate by a simple two-terminal electrochemical technique at a constant current density of 0.15 A/cm(2) using a mixture of Ga2O3, HCl, NH4OH ...

Cathodoluminescence real-color imaging and spectroscopy were employed to study the properties of Ga(2)O(3) nanowires grown with different Sn/Ga ratios. The structures grown under Sn-rich conditions show large spectral emission variation, ranging from blue to red, with a green transition zone. Spectral emission changes correlate with changes in the chemical composition and structure found by ene...

2D β-Ga2O3 flakes on a continuous 2D graphene film were prepared by a one-step chemical vapor deposition on liquid gallium surface. The composite was characterized by optical microscopy, scanning electron microscopy, Raman spectroscopy, energy dispersive spectroscopy, and X-ray photoelectron spectroscopy (XPS). The experimental results indicate that Ga2O3 flakes grew on the surface of graphene ...