Dynamic etching methods for fabricating fibre optic tips are explored and modelled. By vertically translating the fibre during etching by an HF solution under an organic protective layer, a variety of tip shapes were created. The probe taper lengths, cone angles and geometrical probe shapes were measured in order to evaluate the dynamic meniscus etching process. Fibre motion, etching rate, meni...

Reactive ion etching with SiCl, and BCls of high quality GaN films grown by plasma enhanced molecular beam epitaxy is reported. Factors such as gas chemistry, flow rate, and microwave power affecting the etching rate are discussed. The etch rate has been found to be larger with BCls than with SiC14 plasma. An etch rate of 8.5 &s was obtained with the BCl, plasma for a plasma power of 200 W, pre...

We investigated the aluminum nitride etching process for MEMS resonators. The process is based on Cl2/BCl3/Ar gas chemistry in inductively coupled plasma system. The hard mask of SiO2 is used. The etching rate, selectivity, sidewall angle, bottom surface roughness and microtrench are studied as a function of the gas flow rate, bias power and chamber pressure. The relations among those parameter...

It is important to measure the bulk-etching rate for any solid state nuclear track detectors, because they have an application in different fields of sciences. The effect of gamma rays emitted from 60 Co source with different doses on LR-115 detector was studied. The bulk etching rate of the detectors was measured before and after irradiation using gamma source. From the results the values of t...

This work characterized the Cl2/HBr ion-enhanced plasma-surface interactions with poly-silicon as a function of the gas composition, ion energy, ion incident angle and other important process parameters. A realistic inductively coupled plasma beam apparatus capable of generating ions and neutrals representative of a real commercial etcher was constructed and utilized to simulate accurately a hi...

Purpose: The polishing of cut lead glass crystal is effected through the dowsing of the glass in a mixture of two separate acids, which between them etch the surface and as a result cause it to be become smooth. In order to characterise the resultant polishing the rate of surface etching must be known, but when this involves multicomponent surface reactions it becomes unclear what this rate act...

It has been found that in the etching of SiO2 using CHF3 in an inductively coupled plasma reactor of the planarized coil design, a thin steady state fluorocarbon film can play an important role in determining the rate of etching. This etching is encountered as the amount of bias power used in the SiO2 etching process is increased, and a transition from fluorocarbon film growth on the SiO2 to an...

Etching of GaAs, when plasma of Ar gas is used and CF4 /O2 is directed fall on the wafer from another port in Electron Cyclotron Resonance (ECR) source in Chemically Assisted Ion Beam Etching (CAIBE) has been carried out. The plasma source was 2.45 GHz microwave source superimposed with mirror type magnetic field configuration to have resonance. Effect of CF4/O2/Ar ratio and substrate bias on e...

We report here on significant enhancement of the photochemical etching of p-type gallium phosphide (GaP) by Au plasmonic nanostructures. The photochemical etching rate of defect (dislocation) states of Au-coated p-GaP samples is ten times higher than blank samples when irradiated with 532 nm laser. It is confirmed that the enhancement of photochemical etching is wavelength selective. Only 532 n...

The influence of the aluminum nitride (AlN) film texture on the chemical etching in KOH solution was invested. The AlN films with the different texture and crystal quality were prepared by sputtering. It is found that the chemical etching behaviors, including the etch rate, the activation energy, the surface morphology and the anisotropy, are strongly dependent on the film texture. There is a f...