*Correspondence: Ram K. Gupta, Department of Chemistry, Pittsburg State University, 1701 South Broadway, Pittsburg, KS-66762, USA e-mail: [email protected] Epitaxial tin ferrite (SnFe2O4) thin films were grown using KrF excimer (248 nm) pulsed laser deposition technique under different growth conditions. Highly epitaxial thin films were obtained at growth temperature of 650°C. The quality a...

The preparation of a YBa2Cu3O7−x/LaNiO3/YBa2Cu3O7−x sandwich structured film on a LaAlO3 (100) substrate by a sol-gel method was investigated. YBa2Cu3O7−x/LaNiO3/YBa2Cu3O7−x tri-layer heterostructures with different epitaxial characteristics can be deposited by controlling the heat treatment temperature. X-ray diffraction and transmission electron microscopy results show that the bottom YBCO fi...

An epitaxial thin film consists of layers of atoms whose lattice properties are determined by those of the underlying substrate. This paper reviews mathematical modeling, analysis and simulation of growth, structure and pattern formation for epitaxial systems, using an island dynamics/level set method for growth and a lattice statics model for strain. Epitaxial growth involves physics on both a...

Metalorganic chemical vapor deposition (MOCVD) was used to deposit epitaxial BaTiO 3 thin films on (100) MgO substrates at 600'C. The metalorganic precursors employed in the deposition experiments were hydrated Ba(thd)2 (thd = CIIH190 2) and titanium isopropoxide. The films were analyzed by means of transmittance spectroscopy, wavelength dispersive x-ray spectrometry, secondary ion mass spectro...

Epitaxial Pt(001) thin films have been grown on MgO(001) substrates using dc magnetron sputtering with an Ar/0 2 mixture at 700'C. The width (FWHM) of the rocking curve of the Pt(002) peak is between 0.160 and 0.200, which is only 0.05' wider than that of the MgO (002) peak of the cleaved substrate. The film surface roughness is about 1 nm (rms) for a 240 nm thick Pt film. No grain structure co...

Epitaxial heterostructures with precisely controlled composition and electronic modulation are of central importance for electronics, optoelectronics, thermoelectrics, and catalysis. In general, epitaxial material growth requires identical or nearly identical crystal structures with small misfit in lattice symmetry and parameters and is typically achieved by vapor-phase depositions in vacuum. W...

Hybridized porous coordination polymers (PCPs) are synthesized through epitaxial growth or ligand replacement. Whereas epitaxial growth on the core crystal leads to a sandwich type PCP, ligand replacement near the surface of core crystal results in a core-shell type PCP.

The present status of a new epitaxial growth method, named molecular beam allotaxy (MBA), is reviewed. The method allows one to grow single-crystalline heterostructures in a new way; that is, the desired layer forms during annealing of a precipitate layer. The precipitates are embedded within a single-crystalline matrix, grown by molecular beam epitaxy. The key point is that the epitaxial growt...

Twinning, polytypism, and polarity are important aspects in nanostructural growth since their presence can affect various properties of the as-grown products. The morphology of nanostructures grown via van der Waals epitaxy is shown to be strongly infl uenced by the twinning density and the presence of polytypism within the nanostructures, while the growth direction is driven by the compound po...

High-quality GaN epitaxial films have been grown on Si substrates with Al buffer layer by the combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) technologies. MBE is used to grow Al buffer layer at first, and then PLD is deployed to grow GaN epitaxial films on the Al buffer layer. The surface morphology, crystalline quality, and interfacial property of as-grown GaN ep...