The effects of including incoherent (bound-electron) and coherent (Rayleigh) scattering in exposure buildup factor calculations for point isotropic gamma ray sources, penetrating a two-layer water-lead shield have been investigated in the gamma ray energy (E?) range of 40 keV to 3 MeV. Incoherent scattering decreases the values of these factors in both layers up to E? ~ 200 keV and the effect i...

in this paper, we examine the effect of the energy difference between the l- and the -valleys in compound semiconductor materials, carrier effective mass, and the scattering processes on the electron transport characteristics in mesfets. to do this, we use the monte carlo simulation to demonstrate the superiority of the ingaas mesfet, made on a semi-insulating inp substrate, over both inp and ...