نتایج جستجو برای: electrochemical etching time

تعداد نتایج: 1946820  

2018
Woong-Kirl Choi Seong-Hyun Kim Seung-Geon Choi Eun-Sang Lee

Ultra-precision products which contain a micro-hole array have recently shown remarkable demand growth in many fields, especially in the semiconductor and display industries. Photoresist etching and electrochemical machining are widely known as precision methods for machining micro-holes with no residual stress and lower surface roughness on the fabricated products. The Invar shadow masks used ...

2014
Jia-Hui Tan Zhi-zhan Chen Wu-Yue Lu Yue Cheng Hong He Yi-Hong Liu Yu-Jun Sun Gao-Jie Zhao

In this letter, the uniform 4H silicon carbide (SiC) mesopores was fabricated by pulsed electrochemical etching method. The length of the mesopores is about 19 μm with a diameter of about 19 nm. The introduction of pause time (T off) is crucial to form the uniform 4H-SiC mesopores. The pore diameter will not change if etching goes with T off. The hole concentration decreasing at the pore tips d...

F. Nazeri, H.R. Khosravi, M. Taheri, M.R. Deevband, M.R. Kardan, N. Ahmadi, P. Abdolmaleki,

Background: The Poly-Allyl Diglycol Carbonate (PADC) detector is of particular interest for development of a fast neutron dosimeter. Fast neutrons interact with the constituents of the CR-39 detector and produce H, C and O recoils, as well as (n, α) reaction. These neutron- induced charged particles contribute towards the response of CR-39 detectors. Material and Methods: Electrochemical...

2005
G. Barillaro P. Bruschi A. Diligenti A. Nannini

In this paper photo-electrochemical etching of silicon in HF-based solutions is employed as a versatile technique for fabrication of original silicon microstructures, alternative to commonly used methods. Photo-electrochemical etching, a well known technique for regular macropore formation, has been exploited to produce a multitude of different regular silicon microstructures (microtubes, micro...

2012
Thomas Defforge Jérôme Billoué Marianne Diatta François Tran-Van Gaël Gautier

In this article, the physico-chemical and electrochemical conditions of through-silicon via formation were studied. First, macropore arrays were etched through a low doped n-type silicon wafer by anodization under illumination into a hydrofluoric acid-based electrolyte. After electrochemical etching, 'almost' through-silicon macropores were locally opened by a backside photolithographic process...

2017
Chang Wu Valérie Pétrini Eric Joseph Fabien Amiot Chang WU Valérie PETRINI Fabien AMIOT

This paper presents a new design and fabrication process of a multiple-thickness electrochemical cantilever sensor, in order to assess the role of the cantilever’s thickness on the chemically-induced mechanical effects. Each cantilever can act not only as a functionalized cantilever, but also as an independent working electrode (WE) for electrochemical measurement. The different thicknesses of ...

Journal: :Analytical chemistry 2001
Z Shen J J Thomas C Averbuj K M Broo M Engelhard J E Crowell M G Finn G Siuzdak

Desorption/ionization on porous silicon mass spectrometry (DIOS-MS) is a novel method for generating and analyzing gas-phase ions that employs direct laser vaporization. The structure and physicochemical properties of the porous silicon surfaces are crucial to DIOS-MS performance and are controlled by the selection of silicon and the electrochemical etching conditions. Porous silicon generation...

2003
Jens Christian Claussen Jürgen Carstensen Marc Christophersen Sergiu Langa Helmut Föll

Electrochemical etching of semiconductors, apart frommany technical applications, provides an interesting experimental setup for self-organized structure formation capable e.g. of regular, diameter-modulated, and branching pores. The underlying dynamical processes governing current transfer and structure formation are described by the CurrentBurst-Model: all dissolution processes are assumed to...

Journal: :CoRR 2007
G.-J. Wang W.-Z. Chen K. J. Chang

A cost effectively method to fabricate nanopores in silicon by only using the conventional wet-etching technique is developed in this research. The main concept of the proposed method is a two-step etching process, including a premier double-sided wet etching and a succeeding track-etching. A special fixture is designed to hold the pre-etched silicon wafer inside it such that the track-etching ...

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