In this work, we study thin-film limits of the full three-dimensional Ginzburg–Landau model for a superconductor in an applied magnetic field oriented obliquely to the film surface. We obtain Γ−convergence results in several regimes, determined by the asymptotic ratio between the magnitude of the parallel applied magnetic field and the thickness of the film. Depending on the regime, we show tha...

An atomic force microscope (AFM) and spectrometer combined system for in-situ thickness measurement of nano-porous alumina (PA) films is introduced. The AFM is applied to obtain the porosity of PA film, and then we calculate the effective refractive index by Maxwell-Garnett effective dielectric constant theory. The optical thickness of PA film is determined by reflective interference spectromet...

We investigated the magnetotransport properties of Bi2Te3 films grown on GaAs (001) substrate by a cost-effective metallo-organic chemical vapor deposition (MOCVD). We observed the remarkably high carrier mobility and the giant linear magnetoresistance (carrier mobility ∼ 22 000 cm(2) V(-1) s(-1), magnetoresistance ∼ 750% at 1.8 K and 9 T for a 100 nm thick film) that depends on the film thickn...

The conductance of thin films with diffusive surface scattering was solved semi-classically by Fuchs and Sondheimer. However, when the intrinsic electron mean free path is very large or infinite their conductance diverges. In this letter a simple diffraction picture is presented. It yields a conductance which corresponds to a limiting mean free path of a2kF /(2π) where a is the film thickness. ...

The correlation-driven transition from a paramagnetic metal to a paramagnetic Mott-Hubbard insulator is studied within the half-filled Hubbard model for a thin-film geometry. We consider simple-cubic films with different low-index surfaces and film thickness d ranging from d = 1 (two-dimensional) up to d = 8. Using the dynamical mean-field theory, the lattice (film) problem is self-consistently...

In this research, tellurium (Te) film with thicknesses of 100-250 nm were deposited on ceramic substrates by thermal evaporation at 373 K. The thickness of the film was determined by Rutherford backscattering spectroscopy. The influence of the thickness on the structural, morphological and molecular bonds was characterized using XRD, scanning electron microscope, and Raman spectroscopy. The XRD...

background and aims. microleakage is still one of the major problems of composite-based restorations. this study compared the microleakage and thickness of resin cement in ceramic inlays with various temperatures. materials and methods. class v cavities were prepared on the buccal and lingual aspects of thirty human molars with occlusal margins in enamel and gingival margins in dentin (3 mm wid...

This paper reports the correlation between film thickness, nanostructure and DC electrical properties of copper thin films deposited by PVD method on glass substrate. X-ray diffraction (XRD) and atomic force microscopy (AFM) were used for crystallography and morphology investigation, respectively. Resistivity was measured by four point probe instrument, while a Hall effects measurement system w...

Mobility in advanced MOSFETs with strained ultra-thin silicon body is investigated. We use a two-band k·p model to describe the subband structure in strained silicon thin films. The model provides the dependence of the conductivity effective mass on strain and film thickness. The conductivity mass decreases along tensile stess in [110] direction applied to a (001) silicon film. This conductivit...

Strain relaxation studies in epitaxial magnetite Fe3O4 thin films grown on MgO 100 substrates using high-resolution x-ray diffraction and cross-sectional transmission electron microscopy reveal that the films remain fully coherent up to a thickness of 700 nm. This thickness is much greater than the critical thickness tc for strain relaxation estimated from mismatch strain. Anomalous strain rela...