نتایج جستجو برای: dual material gate
تعداد نتایج: 556549 فیلتر نتایج به سال:
A simple analytical model of a nanoscale fully depleted dualmaterial gate (DMG) SOI and SON MOSFETs has been developed and their performance comparison analysis is presented in this paper. An analytical model for the surface potential and threshold voltage has been developed both for these structures using a generalized 2D Poisson’s equation solution. The DMG SON MOSFET technology is found to h...
In this paper, electric field distribution of the junctionless dual material surrounding gate MOSFETs (JLDMSG) is developed. Junctionless is a device that has similar characteristics like junction based devices, but junctionless has a positive flatband voltage with zero electric field. In Surrounding gate MOSFETs gate material surrounds the channel in all direction , therefore it can overcome t...
We have fabricated a novel organic/inorganic hybrid material consisting of multifunctional surfactant-encapsulated polyoxometalloeuropate which functions as a luminescent logic gate with dual output operated by light and metal ion as inputs.
In this paper we present current voltage and trans-conductance model for Dual Material Gate AlGaN/GaN HEMT. Our proposed model demonstrates complete charge control in 2DEG based channel of the device in order to investigate the current-voltage as well as transfer characteristics of the device under various gate and drain biases. The proposed device structure uses GaN material capable to withsta...
A low-temperature (LT) grown InAs epi-layer has been applied as the gate to the dual-material structure of lattice-matched InGaP on GaAs, to make a high-temperature power rectifier. The LT molecular beam epitaxy technique enables the formation of an abrupt interface between InAs and InGaP. This heterojunction rectifier utilises the strong thermal stability of the InAs=InGaP heterojunction and t...
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