A planar double gate quantum wire transistor (QWT) is proposed and demonstrated. The transistor uses a narrow wire gate placed inside the gap of a split gate to create a single one-dimensional ( 1D) quantum wire (QW) . We demonstrate theoretically and experimentally that the wire gate can create a QW potential with a better confinement and therefore larger subband separations than that in other...

Abstract – Numerical simulations of In0.52Al0.48As/In0.7Ga0.3As/InP HEMTs have been carried out with a 2D/3D-hydrodynamic model. The investigation of double gate and striped-channel devices with the same layer structure results in an increase of cut-off frequencies. At a reduce of gate lengths down to 5 nm short channel effects becomes important in particular for the single gate device. Transis...

Transistor size is decreasing day by day, therefore it is difficult to overcome the problem of short channel effects. For preventing short channel effects, source/drain engineering, substrate engineering & gate engineering have been introduced. According to chronological growth of VLSI Design, there is need of non-conventional structure of MOSFET and researchers are getting shifted in search of...

The conventional MOSFETs are likely to reach scaling limitations at gate lengths between 15 and 10nm. The double-gate MOSFET architecture is a promising candidate for scaling to 10nm and below in line with the requirements of the International Technology Roadmap. However, it is expected that direct source-drain tunnelling would be a major limiting factor in the double-gate device. In this paper...

MOSFETs with gate length down to 17 nm are reported. To suppress the short channel effect, a novel self-aligned double-gate MOSFET, FinFET, is proposed. By using boron-doped Si0 4Ge0 6 as a gate material, the desired threshold voltage was achieved for the ultrathin body device. The quasiplanar nature of this new variant of the vertical double-gate MOSFETs can be fabricated relatively easily usi...

In this paper fringe capacitance of double hetero gate Tunnel FET has been studied. The physical model for fringe capacitance is derived considering source gate overlap and gate drain non overlap. Inerface trap charge and oxide charges are also introduced under positive bias stress and hot carrier stress and their effect on fringe capacitance is also studied. The fringe capacitance is significa...