We will present brief overview on the electronic and transport properties of graphene nanoribbons focusing on the effect of edge shapes and impurity scattering. The low-energy electronic states of graphene have two non-equivalent massless Dirac spectrum. The relative distance between these two Dirac points in the momentum space and edge states due to the existence of the zigzag type graphene ed...

Disordered T-shaped graphene nanodevice (TGN) was designed and studied in this paper. We demonstrated the intrinsic transport properties of the TGN by using Landauer approach. Knowing the transmission probability of an electron the current through the system is obtained using Landauer-Buttiker formalism. The effects of single disorder on conductance, current and on the transport length scales a...

Defects in graphene alter its electrical, chemical, magnetic and mechanical properties. The intentional creation of defects in graphene offers a means for engineering its properties. Techniques such as ion irradiation intentionally induce atomic defects in graphene, for example, divacancies, but these defects are randomly scattered over large distances. Control of defect formation with nanoscal...

Standard semiconductor fabrication techniques are used to fabricate a quantum dot (QD) made of WS2, where Coulomb oscillations were found. The full-width-at-half-maximum of the Coulomb peaks increases linearly with temperature while the height of the peaks remains almost independent of temperature, which is consistent with standard semiconductor QD theory. Unlike graphene etched QDs, where Coul...

We show that the influence of spin-orbit (SO) coupling on the weak-localization effect for electrons in graphene depends on the lack or presence of z→-z symmetry in the system. While, for z→-z asymmetric SO coupling, disordered graphene should display a weak antilocalization behavior at lowest temperature, z→-z symmetric coupling leads to an effective saturation of decoherence time which can be...