OBJECTIVE To evaluate the effect of transcutaneous electrical acupuncture point stimulation (TEAS) on endometrial HOXA10 protein expression and three-dimensional (3D) power Doppler ultrasound parameters as markers of endometrial receptivity in women undergoing frozen-thawed embryo transfer (FET). METHODS A total of 68 women undergoing FET were randomised to receive TEAS or mock TEAS at acupun...

This paper presents an overview of the noise modeling extraction methods developed at the Microwave Electronics Laboratory at Chalmers University of Technology. The presented methods are suitable for different kinds of noise models, the one and two parameter Pospieszalski model, and the three parameter PRC model. We also present a low power low noise amplifier. Introduction To facilitate the de...

The authors develop a theory of photodetection in double-gated bilayer graphene (BLG) field-effect transistor (FET), following the Dyakonov-Shur scheme based on nonlinear mixing plasma waves. A BLG channel displays peculiar effect: band gap depends intensity wave, which makes photoresponse dependent FET electrostatics. work here bridges microscopic features electronic dispersion two-dimensional...

Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing performance has challenging due to the involvement interlinking of multiple parameters. More importantly, interdisciplinarity this research community results a lack consistent benchmarking guidelines. Here we report consensus a...

The crystal structures, thin-film properties, and field-effect transistor (FET) characteristics of tetrathiafulvalene (TTF) derivatives with two phenyl groups are systematically investigated. The highest mobility, 0.11 cm(2) V(-1) s(-1), is observed in biphenyl-substituted TTF (1). The correlation between the crystal structures and the FET properties demonstrates that good transistor properties...

In this paper, a novel device architecture called the fully depleted silicon-on-insulator field-effect transistor with block oxide (bFDSOI-FET) is proposed to investigate the influence of block oxide height (HBO) on the electrical characteristics. According to the two-dimensional (2-D) simulation results, the characteristics of the proposed structure are similar to those of the ultra-thin (UT) ...

Nanometric field-effect-transistor (FET) sensors are made on the tip of spear-shaped dual carbon nanoelectrodes derived from carbon deposition inside double-barrel nanopipettes. The easy fabrication route allows deposition of semiconductors or conducting polymers to comprise the transistor channel. A channel from electrodeposited poly pyrrole (PPy) exhibits high sensitivity toward pH changes. T...

Afm&act — We present a novel approach to nonlinear large-signaf FET model parameter extraction for GaAs MESFET devices measured under large-signaf condkions. Powerful nonlinear adjoint-based optimizatio~ which employs the harmonic bafance method as the nonlinear circuit simulation technique, simultaneously processes mrdtibias, yultipower inputs, mnki-fundamental-frequency excitations, and mnfti...

On a single ZnO nanowire (NW), we fabricated an inverter-type device comprising a Schottky diode (SD) and field-effect transistor (FET), aiming at 1-dimensional (1D) electronic circuits with low power consumption. The SD and adjacent FET worked respectively as the load and driver, so that voltage signals could be easily extracted as the output. In addition, NW FET with a transparent conducting ...