The use of electrostatic force microscopy (EFM) to characterize and manipulate surfaces at the nanoscale usually faces the problem of dealing with systems where several parameters are not known. Artificial neural networks (ANNs) have demonstrated to be a very useful tool to tackle this type of problems. Here, we show that the use of ANNs allows us to quantitatively estimate magnitudes such as t...

We have grown and compared microstructures and dielectric properties of PNZST thin films prepared on two different substrates by sol /gel methods. To ensure a complete single-phase perovskite PNZST thin film, a capping layer of PbO must be added to the top surface of the thin film before final heat treatment. Microstructure characterization was examined with X-ray diffraction, scanning and tran...

The electronic, and optical properties of rhombohedral Na0.5Bi0.5TiO3nanostructured thin film have been studied by the first–principle approach. Densityfunctional theory (DFT) has been employed to calculate the fundamental properties ofthe layers using full–potential linearized augmented plane–wave (FPLAPW) method. A2×2×1 supercell was constructed with two vacuum slabs o...

Deposition process for thin insulator used in polysilicon gate dielectric of thin film transistors are optimized. Silane and N2O plasma are used to form SiO2 layers at temperatures below 150 ºC. The deposition conditions as well as system operating parameters such as pressure, temperature, gas flow ratios, total flow rate and plasma power are also studied and their effects are discussed.  The p...

Successful integration of paraelectric Ba1-xSrxTiO3 (BST) based thin films with affordable Si substrates has a potential significant commercial impact as the demand for high-frequency tunable devices intensifies. Utilizing a coplanar device design we have successfully designed, fabricated, characterized, and optimized a high performance Ta2O5 thin film passive buffer layer on Si substrates, whi...

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Polyvinylpyrrolidone  /  Nickel  oxide  (PVP/NiO)  dielectrics  were fabricated  with  sol-gel  method  using  0.2  g  of  PVP  at  different working  temperatures  of  80,  150  and  200  ºC.  Structural  properties and surface morphology of the hybrid films were investigated by X- Ray  diffraction  (XRD)  and  Scanning  Electron Microscope  (SEM) respectively. Energy dispersive X-ray spec...

Monitoring of dielectric thin-film production in the microelectronics industry is generally accomplished by depositing a representative film on a monitor wafer and determining the film properties off line. One of the most important dielectric thin films in the manufacture of integrated circuits is borophosphosilicate glass (BPSG). The critical properties of BPSG thin films are the boron content...

Tetracene thin film transistors with rare earth oxide (Nd2O3) as gate dielectric is reported in this work. Rare earth oxide with high dielectric constant and low leakage current improve the performance of the organic thin film transistors (OTFTs). The fabricated tetracene OTFTs have shown good output characteristics with mobility 0.93x10 cm/V.s, ON-OFF ratio 3.3x10, sub-threshold swing 0.06 V/d...

Ti1-xSixO2 dielectric thin films were prepared by cosputtering deposition at room temperature. Electrical properties of high-k Ti1-xSixO2 dielectric thin film were characterized and the leakage current mechanism was analyzed. As the TiO2 power increases, the dielectric constant is increased from 14 to 43 and the dominant leakage current mechanism is changed from Schottky emission to Poole-Frenk...