217 Abstract—As silicon devices shrink and their density increases, the low dielectric constant materials instead of SiO 2 film is required. SiOC film as low-k films was deposited by the capacitively coupled plasma chemical vapor deposition and then annealed at 300~500 ℃ to find out the properties of the dependence on the temperature and polarity. This study researched the dielectric constant u...

In this paper, we discuss the existence of an electromagnetic mode propagating in a thin dielectric film deposited on a metallic film at the particular frequency such that the dielectric permittivity vanishes. We discuss the remarkable properties of this mode in terms of extreme subwavelength mode confinment and its potential applications. We also discuss the link between this mode, the IR abso...

The sensitivity of planar waveguide sensor containing dielectric, superconductor, and left-handed materials has been theoretically investigated. The proposed waveguide sensor in this study consists of a metamaterial film bounded by a dielectric cover and a superconductor substrate. The variation of the sensor sensitivity are found to be strongly depended on the metamaterial film, the film thick...

Metal–insulator–metal (MIM) capacitors have been fabricated using high-κ La2O3\HfO2 dielectric stacks deposited using Dense Plasma Focus (DPF) and were subsequently studied. DPF is a unique machine used for the very first time to fabricate dielectric stacks within a MIM structure as it can be used both to deposit nano-size thin film as well as can also be used to change the properties of the po...

We model the first stage of the electronic interaction between an ion and a metal surface covered with a thin dielectric layer. Specifically, we seek to answer two questions. (i) As an ion approaches the surface from far away, does the first electron that it captures originate from the exposed dielectric layer or the metal underneath it? (ii) What is the ion’s distance from the metal when the f...

A new technique is introduced for both the excitation and the detection of vibrations of micromechanical skuctures. This makes use of a dielectric thin film, sandwiched between lower and upper electrodes, on top of the vibrating structure. The excitation is based on elecbrostatic forces between the charged electrodes, causing deformation of the dielectric film and bending of the multilayer stru...

Pull-in instability often occurs when a film of a dielectric elastomer is subjected to an electric field. In this work, we concoct a set of simple, experimentally implementable, conditions that render the dielectric elastomer film impervious to pull-in instability for all practical loading conditions. We show that a uniaxially pre-stretched film has a significantly large actuation stretch in th...

The capacitance and leakage current properties of multilayer La2O3/Al2O3 dielectric stacks and LaAlO3 dielectric film are investigated in this paper. A clear promotion of capacitance properties is observed for multilayer La2O3/Al2O3 stacks after post-deposition annealing (PDA) at 800 °C compared with PDA at 600 °C, which indicated the recombination of defects and dangling bonds performs better ...

Three-phase composite films consisting of BaTiO3/singlewalled carbon nanotube (SWCNT)/polymer were fabricated. The SWCNTs were shortened and coated with SiO2 to minimise the conducting paths of the SWCNTs in the film. The film showed a dielectric constant and dielectric loss of 92 and 0.031, respectively, at a frequency of 1 kHz. The SiO2-coated short SWCNTs can play important roles in enhancin...

The dielectric strength of a promising interlevel low relative permittivity dielectric is investigated for various film thicknesses and temperatures by using I-V measurements with metalinsulator-semiconductor (MIS) structures. It is found that the dielectric breakdown mechanism also depends on thickness. For relatively thick films (thickness >500 nm), the dielectric breakdown is electromechanic...