نتایج جستجو برای: dc sputtering
تعداد نتایج: 62862 فیلتر نتایج به سال:
AlN thin films deposited at room temperature by reactive DC magnetron sputtering of Al target in pure argon and nitrogen atmosphere. Thin films were deposited on glass and silicon (Si) substrate at different DC power. The variation of DC power on the structural, electrical and optical properties of the films were investigated. Enhancement of crystallinity and conductivity was observed with incr...
Very smooth thin films of iridium have been deposited on super polished fused silica (SiO2) substrates using dc magnetron sputtering in argon plasma. The influence of deposition process parameters on film micro roughness has been investigated. In addition, film optical constants have been determined using variable angle spectroscopic ellipsometery, over the spectra range from vacuum ultraviolet...
A series of Co/Pd multilayers were made by dc magnetron sputter deposition on Al foil substrates. For these multilayered samples, Co layer thicknesses were less than 4 A and Pd layers were varied from 4 to 22 A. Sputtering rates were controlled by either sputtering power (10-50 W) or Ar sputtering pressure (3-15 mTorr). In both cases, lower deposition rates yielded higher perpendicular coercivi...
We have investigated the effects of sputtering Ar gas pressure on magnetic and magneto-optical properties in compositionally modulated Co/Pd thin films. The samples were prepared by dc magnetron sputtering from 2-in.-diam Co and Pd targets by alternately exposing the substrates to targets. Sputtering Ar gas pressure was varied from 2 to 30 mTorr. All samples had same bilayer thicknesses compose...
Transparent p-type semiconducting SrCu2O2 films have been deposited by RF magnetron sputtering under unbalanced bipolar pulsed DC bias on low-alkali glass substrates in a mixed gas of 1% H2/Ar below 400 degrees C. The pulsed DC bias voltages to substrate were varied from 0 V to -200 V with a frequency of 350 kHz. The effect of pulsed DC bias on the structure and electrical and optical propertie...
Copper thin films with nano-scale structure have numerous applications in modern technology. In this work, Cu thin films with different thicknesses from 50–220 nm have been deposited on glass substrate by DC magnetron sputtering technique at room temperature in pure Ar gas. The sputtering time was considered in 4, 8, 12 and 16 min, respectively. The thickness effect on the structural, mo...
We provide a convenient recipe for fabricating reliable superconducting microbolometers as acoustic phonon detectors with sub-nanosecond response, using imagereversal optical lithography and dc-magnetron sputtering, and our recipe requires no chemical or plasma etching. Our approach solves the traditional problem for granular aluminium bolometers of unreliable (i.e., non-Ohmic) electrical conta...
High-mobility ZrInO thin-film transistor prepared by an all-DC-sputtering method at room temperature
Thin-film transistors (TFTs) with zirconium-doped indium oxide (ZrInO) semiconductor were successfully fabricated by an all-DC-sputtering method at room temperature. The ZrInO TFT without any intentionally annealing steps exhibited a high saturation mobility of 25.1 cm(2)V(-1)s(-1). The threshold voltage shift was only 0.35 V for the ZrInO TFT under positive gate bias stress for 1 hour. Detaile...
An in situ platform for characterizing plasma-materials interactions at the nanoscale in the transmission electron microscope (TEM) has been demonstrated. Integrating a DC microplasma device, having plane-parallel electrodes with a 25 nm thick Au film on both the cathode and anode and operating in 760 Torr of Ar, within a TEM provides real-time observation of Au sputtering and island formation ...
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