نتایج جستجو برای: cuinse2

تعداد نتایج: 231  

2000
M. Engelmann B. E. McCandless

CuInSe2 and CuInS2 form a continuous solid solution in which the optical bandgap varies from 1.0 to 1.55 eV [1]. By reacting CuInSe2 films in a flowing H2S/Ar atmosphere, the films can be completely converted to CuInS2 or converted to a graded CuIn(Se1-ySy)2 film, depending on processing conditions. A phenomenological model of the reaction/diffusion process is presented wherein H2S reacts with ...

Journal: :Physical review letters 2003
Clas Persson Alex Zunger

First-principles modeling of grain boundaries (GB) in CuInSe2 semiconductors reveals that an energetic barrier exists for holes arriving from the grain interior (GI) to the GB. Consequently, the absence of holes inside the GB prevents GB electrons from recombining. At the same time, the GI is purer in polymaterials than in single crystals, since impurities segregated to the GBs. This explains t...

2014
Tsung-Wei Chang Wen-Hsi Lee Yin-Hsien Su Yu-Jen Hsiao

Photo-assisted one-step electrodeposition has been applied to help in forming smooth and dense CuInSe2 films. The difference in surface morphology and crystalline quality between CuInSe2 films with various photo-assistance has been investigated. In the photo-assisted electrodeposition process, the many kinds of lamps providing maximum light intensity at about 380 to 620 nm were used as light so...

پایان نامه :وزارت علوم، تحقیقات و فناوری - پژوهشگاه مواد و انرژی - پژوهشکده علوم نانو 1389

مواد نانوساختار دارای پتانسیل بالایی برای کاربرد در وسایل مکانیکی و نوری می باشند. ساختار نانو دارای شکل های مختلفی مانند کره، صفحه، میله، سیم و لوله و... می باشند که این اشکال می توانند بر روی خواص پایه ای مواد، اثر بگذارند. ترکیب cuinse2 ماده مهمی می باشد که در سلول های فتوولتاییک، باتری های خورشیدی و دیودهای منتشر کننده نور مورد استفاده قرار می گیرند. تا کنون برای سنتز نانوساختارهای cuinse2 ...

Journal: :Physical chemistry chemical physics : PCCP 2014
Yian Xie Yufeng Liu Yaoming Wang Xiaolong Zhu Aimin Li Lei Zhang Mingsheng Qin Xujie Lü Fuqiang Huang

Low-cost and high-yield preparation of CuInSe2 films is the bottleneck for promising CuInSe2-based thin film solar cells. Here, we developed a simple, safe and cost-effective method using thioacetic acid to fabricate the absorber films of CuIn(S,Se)2 (CISSe). Dissolution of Cu2O and In(OH)3 in thioacetic acid was attributed to the strong coordination ability of S. The adhesive precursor solutio...

2001
Jochen Titus Hans-Werner Schock Robert W. Birkmire William N. Shafarman Udai P. Singh

The effect of initial film composition and substrate in the sulfurization of CuInSe2 was investigated. CuInSe2 films deposited on either soda-lime glass (SL) or Corning 7059 ® borosilicate glass (7059) substrates were reacted in flowing H2S for times from 1 to 8 hours. Films with Cu-rich composition, Cu/In > 1, reacted for 1 hour had nearly all the Se replaced by S. For Cu-poor films the incorp...

2015
L. E. Oikkonen M. G. Ganchenkova

The wide scatter in experimental results has not allowed drawing solid conclusions on selfdiffusion in the chalcopyrite CuInSe2 (CIS). In this work, the defect-assisted mass transport mechanisms operating in CIS are clarified using first-principles calculations. We present how the stoichiometry of the material and temperature affect the dominant diffusion mechanisms. The most mobile species in ...

2015
L. E. Oikkonen M. G. Ganchenkova

The presence of small amounts of sodium has been shown to improve the electronic performance of Cu(In,Ga)Se-2 (CIGS) solar cells, but the origins of this effect have not yet been fully resolved. In this work, we have addressed the questions involving the role of sodium in CuInSe2 (CIS) using densityfunctional-theory-based calculations. We find no direct way how the creation of Na-related point ...

2001
Robert W. Birkmire Erten Eser

Polycrystalline thin film solar cells based on copper indium diselenide (CuInSe2) and its alloys and cadmium telluride (CdTe) appear to be the most promising candidates for largescale application of photovoltaic energy conversion because they have shown laboratoryefficiencies in excess of 15%. Heterejunction devices with n-type cadmium sulfide (CdS) films show very low minority carrier recombin...

2008
Robert W. Birkmire

CdTe and CuInSe2 based modules have made the transition from pilot scale development to large manufacturing facilities. Production of CdTe modules has validated the cost reduction associated with the high throughput manufacturing process in plants exceeding 100 MW. Similar to development of crystalline Si modules, the next challenges are to improve the performance and processing of the modules....

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