Background Carbon Nanotube Field Effect Transistors (CNTFETs) have high charge sensitivity at room temperature [1]. By using this sensitivity, some nonvolatile memory devices have been demonstrated with charge trapping in SiO 2 gate insulator [2, 3]. Besides, a new design of synapse-like circuit requires a multi-level nonvolatile memory [4]. For this application, and according to its high charg...

This paper deals with the compact modeling of several emerging technologies: first, the double-gate MOSFET (DG MOSFET), and second, the carbon nanotube field-effect transistor (CNTFET). For CNTFETs, we propose two compact models, the first one with a classical behavior (like MOSFET), and the second one with an ambipolar behavior (Schottky-barrier CNTFET). All the models have been compared with ...

The role of phonon scattering in carbon nanotube field-effect transistors sCNTFETsd is explored by solving the Boltzmann transport equation using the Monte Carlo method. The results show that elastic scattering in a short-channel CNTFET has a small effect on the source-drain current due to the long elastic mean-free path smfpd s,1 mmd. If elastic scattering with a short mfp were to exist in a C...

This article presents energy-efficient quaternary minimum and maximum logic circuits based on carbon nanotube field-effect transistor (CNTFET). The specific features of CNTFET, such as the possibility of determining the desired threshold voltages which are obtained by acquiring suitable diameters for carbon nanotubes, facilitate designing efficient circuits with multiple threshold voltages. The...

Carbon nano tube devices are considered as a better replacement for CMOS technology nowadays due to its decreased sizing and increased performance. Resistive open and bridging faults play vital role in the dynamic fault analysis. These faults are important since the number of interconnects have increased. In this study we discuss the effect of open and bridging defects along with the variation ...

Modulo 2+1 multiplier is one of the critical components in the area of digital signal processing, residue arithmetic, and data encryption that demand high-speed and low-power operation. In this paper, a new circuit implementation of a high-speed low-power modulo 2+1 multiplier is proposed. It has three major stages: partial product generation stage, partial product reduction stage, and the fina...

This paper deals with the propagation delay comparison of half adder with different FETs; such as MOSFET, CNTFET, FINFET. Nanotechnology is the promising field which functions at the molecular level to replace the conventional use of classical CMOS. By simulation, the best part is got that CNTFET shows lesser delay for half adder circuit.

In this paper at first a brief review of carbon nanotubes (CNTs) is given and then an extensive survey of CNTFET (carbon nanotube field effect transistor) based logic circuits are discussed with the most recently reported CNTFET logic circuits. Keywords— MOSFETs, technology scaling, CNTFETs, carbon nanotubes (CNT), chiriality.

The method opted for accuracy, and no existing studies are based on this method. A design characteristic survey of a new small band gap semiconducting Single Wall Carbon Nano Tube (SWCNT) Field Effect Transistor as photodetector is carried out. In the proposed device, better performance achieved by increasing diameter introducing single halo (SH) doping in channel length CNTFET device. This pap...

The features of CNT (Nanotube Carbon) are fascinating to study due their unique structural and electrical capabilities. small structure the in Field-Effect Transistor technology can produce a smaller device with better performance. In this work, Taguchi method had been implemented optimize Carbon Nanotube (CNTFET). Minitab 19 software used carry out analysis. Three design parameters (diameter C...