نتایج جستجو برای: charges coupled device

تعداد نتایج: 874642  

2008
David Carpentier Pierre Le Doussal

We present a detailed derivation of the renormalization group equations for two dimensional electromagnetic Coulomb gases whose charges lie on a triangular lattice (magnetic charges) and its dual (electric charges). The interactions between the charges involve both angular couplings and a new electromagnetic potential. This motivates the denomination of “elastic” Coulomb gas. Such elastic Coulo...

Introduction: According to the literature, optical coherence tomography (OCT) can be used measure radiation absorbed dose. This study was carried out to design a computed tomography system for the calculation of absorbed dose and optimization of dose delivery in radiotherapy using gel dosimeters. Material and Methods: An advanced charge-coupled device based OCT system was developed in laborator...

2008
J. Lukierski

The model of nonrelativistic particles coupled to nonstandard (2+1)–gravity [1] is extended to include Abelian or non-Abelian charges coupled to Chern– Simons gauge fields. Equivalently, the model may be viewed as describing the (Abelian or non-Abelian) anyonic dynamics of Chern–Simons particles coupled, in a reparametrization invariant way, to a translational Chern–Simons action. The quantum t...

Journal: :Accounts of chemical research 2015
Sybren Ten Cate C S Suchand Sandeep Yao Liu Matt Law Sachin Kinge Arjan J Houtepen Juleon M Schins Laurens D A Siebbeles

CONSPECTUS: In a conventional photovoltaic device (solar cell or photodiode) photons are absorbed in a bulk semiconductor layer, leading to excitation of an electron from a valence band to a conduction band. Directly after photoexcitation, the hole in the valence band and the electron in the conduction band have excess energy given by the difference between the photon energy and the semiconduct...

2001
L. Giraud J. Koster A. Marrocco J.-C. Rioual

In this paper, we present some parallel implementations of domain decomposition techniques for the solution of the drift diffusion equations involved in 2D semiconductor device modeling. The model describes the stationary state of a device when biases are applied to its bounds. The mixed dual formulation is retained. Therefore, we have to deal with a system of six totally coupled nonlinear part...

Journal: :IBM Journal of Research and Development 2001
Walter Riess Heike Riel Tilman Beierlein Wolfgang Brütting Peter Müller Paul F. Seidler

Trapped and interfacial charges have significant impact on the performance of organic light-emitting devices (OLEDs). We have studied devices consisting of 20 nm copper phthalocyanine (CuPc) as the buffer and hole-injection layer, 50 nm N,N*di(naphthalene-1-yl)-N,N*-diphenyl-benzidine (NPB) as the hole transport layer, and 65 nm tris(8-hydroxyquinolinato)aluminum (Alq3) as the electron transpor...

2011
Rajni Gautam Manoj Saxena Mridula Gupta

The paper presents a simulation study of effect of interface fixed charges on the performance of the cylindrical nanowire MOSFET for different channel materials (Si, GaAs and Ge). The objective of the present work is to study the effect of hot carrier damage/stress induced damage/process damage/radiation damage induced fixed charges at the semiconductor-oxide interface of the cylindrical nanowi...

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