نتایج جستجو برای: carbon nanotube field

تعداد نتایج: 1054926  

2012
Je Hwang Ryu Jung Su Kang Kyu Chang Park

The carbon nanotube field emitter array was grown on silicon substrate through a resist-assisted patterning (RAP) process. The shape of the carbon nanotube array is elliptical with 2.0 × 0.5 mm for an isotropic focal spot size at anode target. The field emission properties with triode electrodes show a gate turn-on field of 3 V/μm at an anode emission current of 0.1 mA. The author demonstrated ...

2013
Sameer Prabhu Nisha Sarwade

Carbon Nanotube Field Effect Transistors (CNTFET) are promising nanoscaled devices for implementing high performance, very dense and low power circuits. Most carbon nanotube field-effect transistors (CNTFETs) directly attach metal source/drain contacts to an intrinsic nanotube channel known as SBCNFET. When the gate oxide thickness is reduced, such transistors display strong ambipolar conductio...

Journal: :modares journal of medical sciences: pathobiology 2010
fatemeh mottaghitalab vahid mottaghitalab mehdi farokhi nasim amiralian ali eslamifar

objective: nowadays, as the field of neural tissue engineering advances, the fabrication and application of combined structures open a new window of research for the regeneration of nervous system injuries. in this study, chitosan/poly(vinyl alcohol)-carbon nanotube nanocomposites has been exploited as scaffolds. materials and methods: electrospinning was used to fabricate chitosan/poly(vinyl ...

2007
Lee Chow Guangyu Chai

Focused ion beam (FIB) techniques have found many applications in nanoscience and nanotechnology applications in recent years. However, not much work has been done using FIB to fabricate carbon nanotube devices. This is mainly due to the fact that carbon nanotubes are very fragile and energetic ion beam from FIB can easily damage the carbon nanotubes. Here we report the fabrication of carbon na...

Journal: :Science 2003
Kinneret Keren Rotem S Berman Evgeny Buchstab Uri Sivan Erez Braun

The combination of their electronic properties and dimensions makes carbon nanotubes ideal building blocks for molecular electronics. However, the advancement of carbon nanotube-based electronics requires assembly strategies that allow their precise localization and interconnection. Using a scheme based on recognition between molecular building blocks, we report the realization of a self-assemb...

2006
HONGJIE DAI ALI JAVEY ERIC POP DAVID MANN WOONG KIM

This paper presents a review on our recent work on carbon nanotube field effect transistors, including the development of ohmic contacts, high-κ gate dielectric integration, chemical functionalization for conformal dielectric deposition and pushing the performance limit of nanotube FETs by channel length scaling. Due to the importance of high current operations of electronic devices, we also re...

2017
Vanessa Velasco

CARBON NANOTUBE THIN FILM TRANSISTORS FOR BIOMEDICAL APPLICATIONS Vanessa Velasco August 5, 2010 The application of carbon nanotubes (CNTs) has captivated the curiosity of today's experts due to the escalating potential in the field of electronic detection of biomolecules. Their extreme environmental sensitivity and small size make them ideal candidates for future biosensing technologies. Recen...

2002
SLAVA V. ROTKIN ILYA ZHAROV I. Zharov

The use of carbon nanotubes for field effect nanoelectronic devices, which has been recently demonstrated, motivates further studies of electrochemical and chemical analogues of nanotube molecular transistors. However, chemical gating is not applicable for modern electronics due to its slow response. Herein we propose a novel molecular electronic device: Nanotube LightControlled Switch (NLCS). ...

2012
A. BENFDILA

The present paper treats the Carbon Nanotube Field Effect Transistors (CNFETs) in terms of new development as a possible future basic element for beyond CMOS technology used in ultra high scale integration ULSI. The CNFET is studied both in physical as well as technological point of views aiming a further understanding of the limitations to high integration density. The different types of carbo...

2005
JING GUO SIYURANGA O. KOSWATTA NEOPHYTOS NEOPHYTOU MARK LUNDSTROM

This paper discusses the device physics of carbon nanotube field-effect transistors (CNTFETs). After reviewing the status of device technology, we use results of our numerical simulations to discuss the physics of CNTFETs emphasizing the similarities and differences with traditional FETs. The discussion shows that our understanding of CNTFET device physics has matured to the point where experim...

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