Commercial EUV lithographic systems require multilayers with higher reflectance and better stability then that published to date. Interface-engineered MoISi multilayers with 70% reflectance at 13.5 nm wavelength (peak width of 0.545 nm) and 71% at 12.7 nm wavelength (peak width of 0.49 nm) were developed. These results were achieved with 50 bilayers. These new multilayers consist of Mo and Si l...

Catalyst-free growth of boron carbide nanowires is achieved by pyrolysis of diborane and methane at 650–750 -C and around 500 mTorr in a quartz tube furnace. Electron-diffraction analysis using a novel diffraction-scanning transmission electron microscopy (D-STEM) technique indicates that the crystalline nanowires are single-crystal orthorhombic boron carbide. TEM images show that the nanowires...

Abstract Spectroscopic investigations are made on expanding plasma plumes created by a 20 ns, 3 J laser pulse impinging perpendicularly onto targets of boron, boron carbide and boron nitride. The characterization of the plasma plumes is carried out spectroscopically in the wavelength range from 30 to 330 Å, and by taking pinhole pictures at shorter wavelengths. The experimental results are comp...

The structural and electronic properties of nickeland phosphorus-doped boron–carbon (B5C) alloy thin films grown by plasma-enhanced chemical vapor deposition have been examined. The Ni-doped boron–carbon alloys were grown using closo-1,2-dicarbadodecaborane (C2B10H12) as the boron–carbon source compound and nickelocene (Ni(C5H5)2) as the nickel source. The phosphorus-doped alloys were grown usi...

A unique combination of useful properties in boron-carbide, such as extreme hardness, excellent fracture toughness, a low density, a high melting point, thermoelectricity, semi-conducting behavior, catalytic activity and a remarkably good chemical stability, makes it an ideal material for a wide range of technological applications. Explaining these properties in terms of chemical bonding has re...

Solid-state neutron detectors based only on boron-rich semiconductors are of interest for their potential to provide the highest thermal neutron detection efficiencies of any solid-state neutron detectors. A simple physical model, recently shown to generate thermal neutron capture product spectra that agree quantitatively with full-physics GEANT4 simulation, is used to compare the capture produ...

In this paper, a hand-held neutron radiation sensor application is described. The sensor system utilizes a new class of boron-carbide diode that interacts with incoming neutrons. To interface with the boron-carbide diode an integrated front-end is designed in a 1.5/spl mu/m standard CMOS technology. With the diode and front-end microchip, a hand-held neutron detection system was realized with a...

Knowledge of the thermal conductivity of boron carbide is necessary o evaluate its potential for high temperature thermoelectric energy conversion applications. We have measured the thermal diffusivity of hot -pressed boron carbide B1_xCx samples as a function of composition (0.1 < x < 0.2), temperature (300 K to 1700 K) and temperature cycling. These data in concert with density and specific h...

A new ceramic sintering approach employing plastic deformation as the dominant mechanism is proposed, at low temperature close to the onset point of grain growth and under high pressure. Based on this route, fully dense boron carbide without grain growth can be prepared at 1,675-1,700 °C and under pressure of (≥) 80 MPa in 5 minutes. The dense boron carbide shows excellent mechanical properties...