The incorporation of Bi in GaSb1 xBix alloys grown by molecular beam epitaxy is investigated as a function of Bi flux at fixed growth temperature (275 1C) and growth rate ð1 μm h Þ. The Bi content is found to vary proportionally with Bi flux with Bi contents, as measured by Rutherford backscattering, in the range 0oxr4:5%. The GaSbBi samples grown at the lowest Bi fluxes have smooth surfaces fr...

The standard heterogeneous rate constants for the reduction of a series of viologen derivatives with a range of inter-ring torsion angles were measured at Bi and Pt electrodes. The electrode potentials for the first one-electron reduction of the viologens vary from -684 mV to -1070 mV vs. Ag/0.01 m Ag+; this enabled a comparison of the behaviour of metallic (Pt) and semi-metallic (Bi) electrode...

in this paper, a novel method of producing bi-metallic alloy nanoparticles at low temperatures using hydrogen bombardment of thin films, deposited on glass substrates, is introduced. optical and morphological characteristics of the nanoparticles were extensively studied for various conditions of plasma treatment, such as plasma power density, temperature, duration of hydrogen bombardment, thick...

   In This paper, the effect of size on melting temperature of metallic nanoparticles (Au, Pb and Bi) is theoretically simulated and explained. In this regard, the cause of difference in various experimental data is introduced, which is the difference between nanoparticles’ grain Gaussian distribution. This volume-depended model with the help of the Gaussian distribution can descri...

We synthesized Bi/Bi2O3 heterojunction nanoparticles at various substrate temperatures using the pulsed laser deposition (PLD) technique with a pulsed Nd:YAG laser. The Bi/Bi2O3 heterojunction nanoparticles consisted of Bi nanoparticles and Bi2O3 surface layers. The average diameter of the Bi nanoparticles and the thickness of the Bi2O3 surface layer are linearly proportional to the substrate t...

Recently, there have been intense efforts in searching for new topological insulator materials. Based on first-principles calculations, we find that all the ultrathin Bi (111) films are characterized by a nontrivial Z(2) number independent of the film thickness, without the odd-even oscillation of topological triviality as commonly perceived. The stable nontrivial Z(2) topology is retained by t...