The tensile-strained Ge quantum dot (QD) is proposed as a new route for the realization of direct band gap conversion in Ge. Ge QDs were successfully grown on an InP substrate by molecular beam epitaxy. The strain field in the QDs were analyzed by high resolution transmission electron microscopy and simulated by the finite element method based on the measured geometries. The strain field in the...

We present a systemic theoretical study of the electronic properties of the quantum dots inserted in quantum dot infrared photodetectors (QDIPs). The strain distribution of three different shaped quantum dots (QDs) with a same ratio of the base to the vertical aspect is calculated by using the short-range valence-force-field (VFF) approach. The calculated results show that the hydrostatic strai...

We present here a novel design to form an artificial quantum dot with electrical confinement and apply it to a Quantum Cascade Laser structure to realize a Quantum Dot Cascade Laser. A two-dimensional finite element method has been used to numerically simulate the novel design of electrical formation of an artificial quantum dot. The size of the quantum dot is electrically tunable and can be ap...

An InGaAsN single-layer quantum dot ~QD! laser structure was grown on GaAs substrates by metalorganic chemical vapor deposition ~MOCVD!. The ridge-waveguide edge emitting laser diodes ~LD! were fabricated and characterized. We demonstrate room-temperature operation of InGaAsN QD lasers with an emission wavelength of 1078 nm. Electroluminescence spectra as a function of injection current showed ...

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A strong dependence of quantum dot (QD)-quantum well (QW) tunnel coupling on the energy band alignment is established in hybrid InAs/GaAs-In(x)Ga(1-x)As/GaAs dot-well structures by changing the QW composition to shift the QW energy through the QD wetting layer (WL) energy. Due to this coupling a rapid carrier transfer from the QW to the QD excited states takes place. As a result, the QW photolu...

We unveil the role of bound-to-continuum photoexcitation of carriers as a relevant process that affects the performance of quantum dot (QD) lasers. We present the response of an InAs/InGaAs QD laser to a sub-band gap pump, showing an unexpected depletion of the emitted photons. We relate this observation with carrier photoexcitation through additional transmission and photocurrent measurements....

We present a theoretical analysis of the optical matrix element between the electron and hole ground states in InAs/GaAs quantum dots QDs modeled with a truncated pyramidal shape. We use an eight-band k·p Hamiltonian to calculate the QD electronic structure, including strain and piezoelectric effects. The ground state optical matrix element is very sensitive to variations in both the QD size an...

High-performance cascaded-junction quantum dot solar cells (CJQDSCs) are fabricated from as-prepared highly monodispersed lead sulfide QDs. The cells have a high power conversion of 9.05% and a short-circuit current density of 32.51 mA cm-2. A reliable and effective stratagem for fabricating high-quality lead sulfide quantum dots (QD) is explored through a "monomer" concentration-controlled exp...

We present a theoretical analysis of the gain characteristics of InGaN/AlGaN quantum dot (QD) lasers. We calculate the elastic strain distribution caused by the lattice mismatch between the QD and the barrier using an original method which takes into account the hexagonal symmetry of the structure’s elastic properties. The method is based on an analytical derivation of the Fourier transform of ...