We describe a method for incorporating ambipolar diffusion in the strong coupling approximation into a multidimensional magnetohydrodynamics code based on the total variation diminishing scheme. Contributions from ambipolar diffusion terms are included by explicit finite difference operators in a fully unsplit way, maintaining second order accuracy. The divergence-free condition of magnetic fie...

Carbon nanotubes (CNTs) exhibit various excellent properties, such as ballistic transport. However, their electrically induced charge carriers and the relation between their spin states and the ballistic transport have not yet been microscopically investigated because of experimental difficulties. Here we show an electron spin resonance (ESR) study of semiconducting single-walled CNT thin films...

Efficient charge injection is critical for flexible organic electronic devices such as organic light-emitting diodes (OLEDs) and field-effect transistors (OFETs). Here, we investigated conjugated polymer-wrapped semiconducting single-walled carbon nanotubes (s-SWNTs) as solution-processable charge-injection layers in ambipolar organic field-effect transistors with poly(thienylenevinylene-co-pht...

Tokamak plasma transport equations are usually obtained by flux surface averaging the collisional Braginskii equations. However, tokamak plasmas are not in collisional regimes. Also, ad hoc terms are added for neoclassical effects on the parallel Ohm’s law, fluctuation-induced transport, heating, current-drive and flow sources and sinks, small magnetic field nonaxisymmetries, magnetic field tra...

We investigate charge transport in ambipolar organic thin-film transistors coupled to a Fabry–Perot cavity.

Semiconductor nanowire field-effect transistors (FETs) are interesting for fundamental studies of charge transport as well as possible applications in electronics. Here, we report low-voltage, low-hysteresis and ambipolar PbSe nanowire FETs using electrolyte-gating with ionic liquids and ion gels. We obtain balanced hole and electron mobilities at gate voltages below 1 V. Due to the large effec...

We demonstrate the ambipolar acoustic transport of optically generated electrons and holes by surface acoustic waves in InGaAsP waveguide structures grown on InP substrates. Transport is detected by monitoring the photoluminescence in the 1400–1500-nm wavelength range emitted by the recombination of the acoustically transported carriers several hundreds of micrometers away from the photoexcitat...

The capability of storing multi-bit information is one of the most important challenges in memory technologies. An ambipolar polymer which intrinsically has the ability to transport electrons and holes as a semiconducting layer provides an opportunity for the charge trapping layer to trap both electrons and holes efficiently. Here, we achieved large memory window and distinct multilevel data st...

The infIuence of strain-induced defects on the ambipolar diffusive transport of excess electrons and holes in the &doped InGaAs/GaAs multiple quantum well system has been examined with a new technique called electron-beam-induced absorption modulation (EBIA). The excess carrier lifetime and diffusion coefficient are obtained by a one-dimensional diffusion experiment that utilizes EBIA. An aniso...

We have used a polarized microluminescence technique to investigate photocarrier charge and spin transport in n-type depleted GaAs nanowires ($ \approx 10^{17}$ cm$^{-3}$ doping level). At 6K, long-distance tail appears the luminescence spatial profile, indicative of transport, only limited by length NW. This is independent on excitation power temperature. Using self-consistent calculation base...