The demands of future CMOS devices require a new gate dielectric material with higher dielectric constant than SiO2. Aluminum oxide is one of the high-k materials and an interesting candidate. Thin Al2O3 layers have been deposited by pulsed laser deposition (PLD) from a mono-crystalline sapphire target. This deposition technique was chosen because of its flexibility and availability. Aluminum o...

The aim of this study was to investigate the importance of surface potential in microbial deposition onto modified granular surfaces. Recent experimental and theoretical work has indicated that surfaces coated with metal oxides and hydroxide rich oxide/hydroxide mixtures ((hydr)oxides) have the potential to increase the capture efficiencies of commercial filtration systems. This study quantitat...

gears are one of the most critical components in power transmission system of an automobile and also many rotating machinery. many studies have been conducted on optimum gear design. the main objective is to design different aluminium metal matrix composite spur gears before and after optimization. aluminium metal matrix material composites are preferred mostly due to their low density. also th...

Ballistic electron emission microscopy has been used to study thin aluminum oxide tunnel junction barriers formed both by magnetron sputter deposition and thermal evaporation. We have found that the barriers made by oxidation of evaporated Al become fully formed at a significantly thinner mean deposited thickness ~;6 Å! than junctions made by sputter deposition. The effective barrier height of ...

″Ultrathin″ metallization layers on the order of nanometers in thickness are increasingly used in semiconductor interconnects and other nanostructures. Aqueous deposition methods are attractive methods to produce such layers due to their low cost, but formation of ultrathin layers has proven challenging, particularly on oxide-coated substrates. This work focused on the formation of thin copper ...

The syntheses and characterization of both tris(diethylamino)aluminum and tris(diisopropylamino)aluminum are presented in this letter. Characterization includes vapor pressure measurements and comparison of the two non-pyrophoric precursors showing them to be viable alternatives to trimethylaluminum. Ultimately, tris(diisopropyl)aluminum was successful in the atomic layer deposition of alumina ...

Deposition of coatings of aluminum, aluminum nitride and aluminum carbide on particulate carbon materials by means of an atmospheric pressure microwave plasma fluidized bed process is reported. Two types of short carbon fibers and a monocrystalline diamond powder were used as substrate. As source of aluminum trimethylaluminum was utilized with nitrogen and argon/hydrogen (5 vol% H2) serving as ...

Electrodeposited aluminum films and template-synthesized aluminum nanorods are examined as negative electrodes for lithium-ion batteries. The lithium-aluminum alloying reaction is observed electrochemically with cyclic voltammetry and galvanostatic cycling in lithium half-cells. The electrodeposition reaction is shown to have high faradaic efficiency, and electrodeposited aluminum films reach t...

Acidic deposition is comprised of sulfuric and nitric acids and ammonium derived from atmospheric emissions of sulfur dioxide, nitrogen oxides, and ammonia, respectively. Acidic deposition has altered soil through depletion of labile pools of nutrient cations (i.e. calcium, magnesium), accumulation of sulfur and nitrogen, and the mobilization of elevated concentrations of inorganic monomeric al...

We report measurements on single electron memory devices where the memory island, a floating gate, is charged through aluminum oxide tunnel barriers, fabricated through plasma oxidation of aluminum and atomic layer deposition (ALD) of aluminum oxide. These devices are characterized at 300 mK and show a definite threshold for tunneling through the oxide barriers indicating a potential for nonvol...