The development of reliable and affordable all-solid-state sodium metal batteries (ASS-SMBs) requires suitable solid-state electrolytes with cost-efficient processing stabilized electrode/electrolyte interfaces. Here, an integrated porous/dense/porous Na5YSi4O12 (NYS) trilayered scaffold is designed fabricated by tape casting using aqueous slurries. In this template-based NYS scaffold, the dens...

Highly reversible oxygen redox chemistry of Li 2 RuO 3 enabled by a stabilizing electrode–electrolyte interphase with sulfide solid electrolyte.

Abstract Moist air is a great challenge for manufacturing sulfide-based all-solid-state lithium batteries as the water in will lead to severe decomposition of sulfide electrolytes and release H 2 S gas. However, different with direct reaction water, short-period exposure Li 10 GeP 12 electrolyte controlled humidity can greatly enhance stability against metal, thus realizing stable based metal b...

This work investigates the synthesis of Cesium (Cs) based all-inorganic (CsPbBr 3 ) perovskite single crystals (PSCs) at low temperatures (45 °C) for application in photosensitive devices.

While optical pulse shapers have important applications in classical and quantum communication regimes laser resonant cavities, engineering of group delay dispersion (GDD) remains one their greatest challenges. Herein, by taking advantage the electrically tunable properties 2D material low-loss nature dielectric material. This paper demonstrates how an active all-dielectric metasurface assisted...

Three-dimensional all-inorganic dual halogen emitter Cs 2 Cd BrCl 5 exhibits broadband white-light emission, which is originated from self-trapped excitons.

Lithium-ion batteries have become a widespread energy storage technology, and research continues towards improving battery properties. One route to increase electrode areal active material loading decrease relative volume fractions of inactive components is thickness, but increasing thickness can impact mechanical stability for conventional composite electrodes. All (AAM) electrodes, including ...

In this work, we demonstrate atomic-layer-deposited (ALD) single-channel indium oxide (In2O3) gate-all-around (GAA) nanoribbon FETs in a back-end-of-line (BEOL) compatible process. A maximum on-state current (ION) of 19.3 mA/{\mu}m (near 20 mA/{\mu}m) is achieved an In2O3 GAA FET with channel thickness (TIO) 3.1 nm, length (Lch) 40 width (Wch) 30 nm and dielectric HfO2 5 nm. The record high dra...