1. Introduction The invention of the High-Electron Mobility Transistor (HEMT) revolutionized the world of high-frequency electronics [1]. First on GaAs, then on InP and more recently on GaN, HEMTs have steadily achieved higher levels of performance in terms of high frequency gain, noise and power. Today, InAs HEMTs on InP exhibit the best balanced high-frequency response (high f T and high f ma...

AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) using La2O3 as gate oxide by electron-beam evaporated have been investigated and compared with the regular HEMTs [1]. The La2O3 thin film achieved a good thermal stability after 200°C, 400°C and 600°C post-deposition annealing due to its high binding energy (835.7 eV) characteristics. Our measurements have shown ...

Based on fluoride-based plasma treatment of the gate region in AlGaN/GaN HEMTs and post-gate rapid thermal annealing (RTA), enhancement mode (E-mode) AlGaN/GaN HEMTs with low on-resistance and low knee-voltage were fabricated. The fabricated E-mode AlGaN/GaN HEMT with 1 μm-long gate exhibits a threshold voltage of 0.9 V, a kneevoltage of 2.2 V, a maximum drain current density of 310 mA/mm, a pe...

Selected material and device issues related to the performance of AlGaN/GaN HEMTs on (111) Si substrates are reported. It is shown that these devices can sustain significantly higher dc power (16 W/mm) than those grown on sapphire. Consequently smaller degradation in the device performance at higher temperatures (up to 400 8C) is demonstrated. Photoionisation spectroscopy reveals trap level of ...

Plasma oscillations in nanometer field effect transistors are used for detection and generation of electromagnetic radiation of THz frequency. Following first observations of resonant detection in 150 nm gate length GaAs HEMT, we describe recent observations of room temperature detection in nanometer Si MOSFETs, resonant detection in GaN/AlGaN HEMTs and improvement of room temperature detection...

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An effective passivation technique for AlGaN/GaN HEMTs is presented. This technique features ultrathin AlN film grown by atomic layer deposition (ALD). With in-situ remote plasma pretreatment prior to the AlN deposition, atomic sharp interface between ALD-AlN and III-nitride can be obtained. Significant current collapse suppression and dynamic ON-resistance reduction are demonstrated in the ALD...

The performance ofaluminum gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTS) diamond and silicon carbide (SiC) substrates is examined. Additionally, the temperature rise in similar devices on diamond and SiC substrates is reported. Recently, identical AlGaN/GaN HEMTs have been fabricated at Cornell NanoScale Science & Technology Facility (CNF) on diamond, bu...

GaN-based high-electron-mobility transistors (HEMTs) are very promising candidates for the next generation of high-power and high-frequency electronics. However, trapping effects have been one of the most important barriers in the development of the GaN semiconductor since its infancy. In recent years, significant research efforts have been focused on understanding and suppressing trapping effe...

AlGaN/GaN High Electron Mobility Transistors (HEMTs) with various gate lengths have been stepstressed under both onand off-state conditions. On-state, high power stress tests were performed on 0.17 lm gate length HEMTs and a single 5 lm spaced TLM pattern. Significant degradation of the submicron HEMTs as compared to the excellent stability of the TLM patterns under the same stress conditions r...