نتایج جستجو برای: 65nm cmos technology
تعداد نتایج: 480154 فیلتر نتایج به سال:
This paper presents the first 150GHz amplifier in a digital 65nm CMOS technology. Design techniques to preserve raw transistor gain near fmax include layout optimization, dummy-prefilled microstrip lines (MSL) for design-rule compliance, and matching topologies which minimize passive element losses. To the authors’ knowledge, the measured 8.3dB gain, 6.3dBm saturated output power (Psat), 1.5dBm...
The design of CMOS based low pass filter for analog-to-digital, digital-to-analog and audio applications is described in this paper. Active load resistor and floating inductor is used for the implementation of low pass filter. CMOS technology has become dominant over bipolar technology for analog circuits design in mixed signal system. The differential floating active inductor is designed with ...
This paper presents the design of a Rotary Traveling Wave Oscillator (RTWO) at 85GHz. The oscillator can be useful in imaging applications. It is implemented in 65nm commercial CMOS technology. The total area of the oscillator is 0.185x0.185 mm. The total power consumption is 25 mA out of 1.5 V supply. Keywords-Rotary Traveling Wave Oscillator, Imaging Applications, Distributed Oscillators ____...
Abstract: This paper presents a new methodology for design of high speed CMOS operational amplifier in Sub-micron region. The opamp uses a compensation technique which increases the unity gain frequency and phase margin simultaneously. The CMOS op-amp presented in this paper works on 1.5V designed in 65nm standard CMOS technology. It exhibits 86dB DC gain. With load of 5pF, the unity gain frequ...
We investigate a synchronous circuit reliability for 65nm−40nm CMOS technology. The impact of Random telegraph noise (RTN) and Negative Bias Temperature Instability (NBTI) on a circuit is evaluated. We found two things. (i) RTN at one or a few stages of a combinational circuit induces a large delay fluctuation under low voltage operation. (ii) LSI lifetime can be extended by utilizing NBTI reco...
Dynamic domino logic circuits are widely used in modern digital VLSI circuits. These dynamic circuits are often favored in high performance designs because of the speed advantage offered over static CMOS logic circuits. The main drawbacks of dynamic logic are a lack of design automation, a decreased tolerance to noise and increased power Consumption. Dynamic CMOS circuits, featuring a high spee...
This paper presents a fully integrated CMOS Vband Injection-Locked Power Amplifier (ILPA) for phase and frequency modulated millimeter-Wave (mm-Wave) transmitter. At mm-Wave frequency, multi-stage PAs are usually employed to achieve enough power gain due to low power gain of CMOS transistor even though it has low power efficiency. This work investigates mm-Wave ILPA for constant envelope modula...
This paper examines the suitability of advanced SiGe BiCMOS and sub 65nm CMOS technologies for applications beyond 80GHz. System architectures are discussed along with the detailed comparison of VCOs, LNAs, PAs and static frequency dividers fabricated in CMOS and SiGe BiCMOS, as required for automotive cruise-control radar, high data-rate radio, and active and passive imaging in the 80GHz to 16...
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