نتایج جستجو برای: نانو روبان gan
تعداد نتایج: 27750 فیلتر نتایج به سال:
in this work we use density functional theory based on the ultra-soft pseudo-potential to calculate thestructural, mechanical and thermal properties of narrow single walled bn, aln and gan nanotubes.the electron-electron interactions were expressed within the local density approximation (lda). wehave also obtained the phonon dispersion and elastic constants of these nanotubes using the densityf...
Thick GaN films, with (1120) or (1126) planes parallel to the r-plane of sapphire, were grown by molecular beam epitaxy using AlN or GaN buffer layers. Characterization by transmission electron microscopy revealed a high density of basal-plane stacking faults (BSFs) in the (1120) non-polar GaN (a-GaN) films. {1120} and {1010} prismatic-plane and {1102} pyramidal-plane stacking faults (SFs) doma...
In this research, we have investigated the effect of increasing length on the electronic transport of an armchair graphene nano-ribbons with nitrogen atom impurity and without impurity. The semi-infinite, one-dimensional molecular systems are connected to two electrodes and the electron-electron interaction is ignored. The system is described by a simple tight binding model. All calculations ar...
This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN. Each thin n-GaN layer sandwiched in the PNPNP-GaN structure is completely depleted due to the built-in ...
Gallium nitride (GaN) nanostructures (NS) were synthesized using pulseddirect current plasma enhanced chemical vapor deposition (PDC-PECVD) on quartzsubstrate at low temperature (600°C). Gallium metal (Ga) and nitrogen (N) plasma wereused as precursors. The morphology and structure of the grown GaN NS werecharacterized by field emission scanning electron microscope (FE-SEM), transmissionelectro...
N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN light emitting diodes (LEDs) in this work. In the proposed architecture, each thin P-GaN layer sandwiched in the NPNPN-GaN structure is completely depleted due to the buil...
در این مقاله، نانوآنتنهای پلاسمونیکی پاپیونی (به‌صورت دو منشور مقابل هم) برای ارتقاء میدان الکتریکی و عامل پارسل گسیلنده‌های نقطۀ کوآنتومی InGaN/GaN در منطقۀ سبز طراحی شدند. برای این کار، ابتدا فلزات طلا، نقره، مس و آلومینیوم بررسی شدند. نتایج اولیه نشان دادند که نانو پاپیون‌های آلومینیومی برای برانگیختگی‌های با طول‌موج نزدیک باند سبز مناسب‌تر هستند. سپس، اثر اندازه، گاف و زیرلایۀ نانوپاپیون...
در این مقاله اثر پهنای سد و پهنای چاه کوانتومی gan/algan بر روی انرژی گذارهای اپتیکی و طیف فتولومینسانس آنها با استفاده از تکنیک فتولومینسانس مورد بررسی قرار گرفته است. مطالعه طیف فتولومینسانس این چاه های کوانتومی در دماهای پایین نشان می دهد که نحوه تغییرات انرژی گذار اپتیکی بر حسب پهنای سد در ساختارهای کوانتومی gan/algan بر خلاف آنچه که در سایر نیمرساناها از قبیل آلیاژهای gaas مشاهده شده, می ب...
The present study was conducted to investigate current density of0.3 0.7 Al Ga N/ GaN multiple quantum well solar cell (MQWSC) under hydrostaticpressure. The effects of hydrostatic pressure were taken into account to measureparameters of 0.3 0.7 Al Ga N/ GaN MQWSC, such as interband transition energy, electronholewave functions, absorption coefficient, and dielectric con...
We develop a novel way to fabricate subwavelength nanostructures on the freestanding GaN slab using a GaN-on-silicon system by combining self-assemble technique and backside thinning method. Silicon substrate beneath the GaN slab is removed by bulk silicon micromachining, generating the freestanding GaN slab and eliminating silicon absorption of the emitted light. Fast atom beam (FAB) etching i...
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