Silicon Carbide (SiC) is believed to be a revolutionary semiconductor material for power devices of the future; many SiC power devices have emerged as superior alternative power switch technology, especially in harsh environments with high temperature or high electric field. In this chapter, the challenges and recent develop‐ ments of SiC power devices are discussed. The first part is focused o...

A carbon nanotube-enhanced SiC (CNT-SiC) coating was deposited on C/C composites to improve the oxidation resistance of C/C. The CNT-SiC coating was prepared by direct growth of CNTs on C/C surface at 700oC followed by deposition of SiC using chemical vapor deposition at 1150oC for 1 hour. SiC was deposited on the CNTs as well as the interface between CNTs and C/C, making CNTs strongly rooted o...

STUDY OBJECTIVES To document the current practice of occupational asthma (OA) diagnosis and use of specific inhalation challenge (SIC). DESIGN, SETTING, AND PARTICIPANTS A survey evaluating the current practice of SIC was mailed to 259 residency training programs in adult pulmonary diseases, allergy and immunology, and occupational medicine accredited in the United States and Canada during th...

Streptococcal inhibitor of complement (SIC) is a highly polymorphic extracellular protein and putative virulence factor secreted by M1 and M57 strains of group A Streptococcus (GAS). The sic gene is highly upregulated in invasive M1T1 GAS isolates following selection of mutations in the covR/S regulatory locus in vivo. Previous work has shown that SIC (allelic form 1.01) binds to and inactivate...

Dense silicon carbide (SiC) matrix composites with SiC whiskers and particles as reinforcement were prepared by infiltrating molten Si at 1550 °C into porous preforms composed of pyrolysed rice husks (RHs) and extra added SiC powder in different ratios. The Vickers hardness of the composites showed an increase from 18.6 to 21.3 GPa when the amount of SiC added in the preforms was 20% (w/w), and...

Different polytypes (α-SiC and β-SiC) and crystallographic orientations ((0001) and (11-20) of 6H-SiC) have been used in order to elaborate Silicon Carbide (SiC) nanopillars using inductively coupled plasma etching method. The cross section of the SiC pillars shows a rhombus, pentagon, or hexagonal morphology depending on polytypes and crystallographic orientations. The favored morphologies of ...

The cluster-expansion method was used to perform first principles phase diagram calculations for the wurtzite-structure quasibinary systems (SiC)1 X(AlN)X, (SiC)1 X (GaN)X and (SiC)1 X(InN)X; and to model variations of band gaps as functions of bulk compositions and temperature. In SiC-AlN, plane wave pseudopotential formation-energy calculations predict low-energy metastable states with format...