in this research the influence of adding sic on microstructure and electrical properties of zno-based nanocomposite varistors were investigated. sic was added with amounts of 10-0 mass% to zno-based varistor composition. it is found that sic allows reaching to high threshold voltage with formation of fine-grained zno.another important effect of adding sic is formation zn2sio4 (willemite) on the ...

A systematic investigation of structural, mechanical, anisotropic, and electronic properties of SiC₂ and SiC₄ at ambient pressure using the density functional theory with generalized gradient approximation is reported in this work. Mechanical properties, i.e., the elastic constants and elastic modulus, have been successfully obtained. The anisotropy calculations show that SiC₂ and SiC₄ are both...

The Si-coated SiC (Si-SiC) composite nanoparticle was prepared by non-transferred arc thermal plasma processing of solid-state synthesized SiC powder and was used as a sintering additive for SiC ceramic formation. Sintered SiC pellet was prepared by spark plasma sintering (SPS) process, and the effect of nano-sized Si-SiC composite particles on the sintering behavior of micron-sized SiC powder ...

Current advancement in electronic devices is so rapid that silicon, the semiconductor material most widely used today, needs to be replaced in some of the fields. Silicon carbide (SiC) is a wide band gap semiconductor satisfying requirements to replace silicon in devices operating at high power and high frequency at elevated temperature, and in harsh environments. Hexagonal polytypes of SiC, su...

in the present study we focused on the electronic and structural properties of na and mg adsorption on the surface of the (6, 6) armchair sicnts. the adsorption energy (eads), band gap energy (eg), partial density of state (pdos), chemical potential (μ), global hardness (η), electrophilicity index (ω), global softness (s), work function values (φ) and work function change (δφ) are calculated by...

We construct the set of all general (i.e. not necessarily rank 1) symmetric informationally complete (SIC) positive operator valued measures (POVMs), and thereby show that SIC-POVMs that are not necessarily rank 1 exist in any finite dimension d. In particular, we show that any orthonormal basis of a real vector space of dimension d 2 − 1 corresponds to some general SIC POVM and vice versa. Our...

Ceramic matrix composites (CMC’s), particularly silicon carbide (SiC) fiber-reinforced SiC-matrix (SiC/SiC) composites, have been studied for advanced nuclear energy applications for more than a decade. The perceived potentials for advanced SiC/SiC composites include the ability to operate at temperature regimes much higher than heat-resistant alloys, the inherent low inducedactivation nuclear ...

Silicon Carbide (SiC) is believed to be a revolutionary semiconductor material for power devices of the future; many SiC power devices have emerged as superior alternative power switch technology, especially in harsh environments with high temperature or high electric field. In this chapter, the challenges and recent develop‐ ments of SiC power devices are discussed. The first part is focused o...

A carbon nanotube-enhanced SiC (CNT-SiC) coating was deposited on C/C composites to improve the oxidation resistance of C/C. The CNT-SiC coating was prepared by direct growth of CNTs on C/C surface at 700oC followed by deposition of SiC using chemical vapor deposition at 1150oC for 1 hour. SiC was deposited on the CNTs as well as the interface between CNTs and C/C, making CNTs strongly rooted o...