Ag(I) doped ZnSe nanoparticles were synthesized using molecular cluster precursors. In the emission spectrum at 390 excitation, three emission bands, centered at 432 nm, 517 nm, and 484 nm, respectively were observed. The 432 nm and 517 nm bands can be assigned to ZnSe band-edge emission and donoraccepter emission from the vacancies and trap states in the ZnSe lattice to the Ag(I) dopant, respe...

In the present work, a one pot, rapid and room temperature photochemical Synthesis of transition metal (TM; Cu, Mn, Cr)-doped ZnSe/ZnS core/shell nanocrystals (NCs) was reported. FT-IR spectrum confirmed the capping of ZnSe by thioglycolic acid. XRD and TEM analysis demonstrated zinc blende phase NCs with an average size of around 3 and 5 nm for TM:ZnSe and TM:ZnSe/ZnS NCs, respectively. PL spe...

The electronic properties of zincblende ZnSe/Si core-shell nanowires (NWs) with a diameter of 1.1-2.8 nm are calculated by means of the first principle calculation. Band gaps of both ZnSe-core/Si-shell and Si-core/ZnSe-shell NWs are much smaller than those of pure ZnSe or Si NWs. Band alignment analysis reveals that the small band gaps of ZnSe/Si core-shell NWs are caused by the interface state...

by analyzing the zero-field-splitting parameters and of cr2+ (3d4) ion located at tetrahedral site in znse crystal, the local structure distortion and absorption spectra around cr2+ in znse: cr2+ system have been calculated on the basis of the complete energy matrix for the d4 configuration within the strong-filed-representation. it is shown that there exists an expansion distortion in the loca...

Shell-core structure of ZnSe nano crystalline cluster is used for marking glucose molecules in this paper. Fluorescent detection is successfully realized in microchannels. Mercaptoacetic acid is used for packing ZnSe nano crystalline cluster, which is dissolved in the water. Carboxyl of mercaptoacetic is used for connecting glucose molecule, and mixture solution of glucose molecule marked with ...

A novel one-step cation exchange approach has been developed to prepare ZnO-decorated ZnSe nanorods (ZnSe-ZnO NRs), a prototype type-II semiconductor nanoheterostructure. Because of the staggered band offset which promoted effective charge separation, the as-synthesized ZnSe-ZnO NRs exhibited remarkable photocatalytic activities under visible light illumination, demonstrating their promising po...

Evidence for electron accumulation in the ZnSe side of n-ZnSe/n-GaAs heterostructures is presented. An n-GaAs buffer layer, approximately 1 pm thick, grown with low 1015 electronic concentration on a semi-insulating (100) GaAs substrate is fully depleted of electrons when an additional epilayer of nZnSe is grown on top of it. The n-GaAs epilayer electron concentration is restored when the ZnSe ...

ZnSe nanowires and nanobelts with zinc blende structure have been synthesized. The morphology and the growth mechanisms of the ZnSe nanostructures will be discussed. From the photoluminescence (PL) of the ZnSe nanostructures, it is interesting to note that red color emission with only a single peak at the photon energy of 2 eV at room temperature is obtained while the typical bandgap transition...

ZnSe nanowire growth has been successfully achieved on ZnSe (100) and (111)B buffer layers deposited on GaAs substrates. Cubic [100] oriented ZnSe nanowires or [0001] oriented hexagonal NWs are obtained on (100) substrates while [111] oriented cubic mixed with [0001] oriented hexagonal regions are obtained on (111)B substrates. Most of the NWs are perpendicular to the surface in the last case. ...