Nanocrystalline hafnium oxide (HfO2) thin films have been produced under variable reactive oxygen (O2) fractionation (Г) employing Hf metal for reactive sputter-deposition. The effect of Г on the HfO2 compound formation, structure, morphology and optical properties has been evaluated. Without oxygen, the films of hexagonal phase of Hf metal were grown. Films grown at different O2 pressure are n...

The bipolar resistive switching characteristics of resistive random access memory (ReRAM) based on HfO2 thin films have been demonstrated by using Ag/HfO2/Pt structured ReRAM device. MIcrowave irradiation (MWI) treatment at low temperature was employed in device fabrication with HfO2 thin films as a transition layer. Compared to the as-deposited Ag/HfO2/Pt device, highly improved uniformity cha...

In this paper, RF MEMS Capacitive Switches for two different dielectrics hafnium oxide (HfO2) and silicon nitride (Si3N4) are presented. The switches have been characterized and compared in terms of RF performance. The major impact of the change from Si3N4 to HfO2 having dielectric constant 20 is the reduction in overall dimension of the switch; capacitive area is reduced by 66% leading to over...

Hafnium oxide (HfO2) films were grown by sputter-deposition by varying deposition temperature (Ts) in a wide range of 25–700 C. The deposited HfO2 films were characterized by studying their growth behavior, microstructure, and optical properties. Characterization of the films employing a wide range of analytical techniques indicate a clear functional relationship between processing conditions, ...

A hybrid material consisting of nonfunctionalized multiwall carbon nanotubes (MWCNTs) and cubic-phase HfO2 nanoparticles (NPs) with an average diameter of 2.6 nm has been synthesized. Free standing HfO2 NPs present unusual optical properties and a strong photoluminescence emission in the visible region, originating from surface defects. Transmission electron microscopy studies show that these N...

We have explored the radiation response of the HfO2/Si system with a combination of capacitance versus voltage and electron spin resonance measurements on capacitor and bare oxide structures subjected to Co gamma irradiation and vacuum ultraviolet irradiation. Our studies have utilized both (100)Si and (111)Si substrate structures. Capacitors have been irradiated under both positive and negativ...

A top-gated MoS2 transistor with 6 nm thick HfO2 is fabricated using an ozone pretreatment. The influence to the top-gated mobility brought about by the deposition of HfO2 is studied statistically, for the first time. The top-gated mobility is suppressed by the deposition of HfO2 , and multilayered samples are less susceptible than monolayer ones.

Although ZrO2 and HfO2 are, for the most part, quite similar chemically, subtle differences in their electronic structures appear to be responsible for differing MO2/Si (M = Zr, Hf) interface stabilities. To shed light on the electronic structure differences between ZrO2 and HfO2, we have conducted joint experimental and theoretical studies. Because molecular electron affinities are a sensitive...

Thin films of hafnium oxide (HfO2) were deposited by atomic layer deposition (ALD). The structural properties of the deposited films were characterised by transmission electron microscopy (TEM) and X-ray diffraction (XRD). We investigated the effect of phase transformations induced by thermal treatments on the mechanical properties of ALD HfO2 using nanoindentation. The elastic modulus of the a...

The physical properties of HfO2 and Hf-silicate layers grown by the atomic layer chemical vapor deposition are characterized as a function of the Hf concentration and the annealing temperature. The peaks of Fourier transform infrared spectra at 960, 900, and 820 cm−1 originate from Hf–O–Si chemical bonds, revealing that a Hf-silicate interfacial layer began to form at the HfO2/SiO2 interface af...