Antiferroelectric (AFE) thick (1 μm) films of Pb(1-3x/2)LaxZr0.85Ti0.15O3 (PLZT) with x = 0.08, 0.10, 0.12, and 0.14 were deposited on LaNiO3/Si (100) substrates by a sol-gel method. The dielectric properties, energy-storage performance, electrocaloric effect, and leakage current behavior were investigated in detail. With increasing La content, dielectric constant and saturated polarizations of...

IP traffic in the core and access networks increases rapidly by the speed-up of the access network and the spread of the rich applications. 10 Gigabit Ethernet (10 GE) becomes a popular link technology to connect IP routers and Ethernet switches not only intra-office transmission links but also inter-office long reach transmission links. The optical layer protection switching is expected to pro...

An active optical access network architecture with our newly developed PLZT ((Pb, La) (Zr, Ti)O3) high-speed optical switch is introduced, with a view to realizing the nextgeneration high capacity scalable access network. This system is developed based on the latest IEEE standard of PON (10G-EPON; IEEE802.3av) in consideration of the coordination with future high capacity PON. PLZT high-speed o...

Mixed-oxides and the coprecipitation procedure were used to prepare PLZT x/65/35 powders. Transparent samples were obtained by hot-pressing. The influence of processing parameters on the microstructure and electrical properties was studied.

An optimal strategy for cascading phased-array deflectors is presented that allows for high-resolution random-access beam steering with continuous scan-angle control but requires a minimum number of control lines. The system is analyzed theoretically by use of a Fourier optics approach and then verified experimentally. A pair of 32-channel optical phased arrays fabricated by use of surface elec...

A transition in source-drain current vs. back gate voltage (ID-VBG) characteristics from extrinsic polar molecule dominant hysteresis to anti-hysteresis induced by an oxygen deficient surface layer that is intrinsic to the ferroelectric thin films has been observed on graphene field-effect transistors on Pb0.92La0.08Zr0.52Ti0.48O3 gates (GFET/PLZT-Gate) during a vacuum annealing process develop...

The journal retracts the article, A Closed-Loop Control Mathematical Model for Photovoltaic-Electrostatic Hybrid Actuator with a Slant Lower Electrode Based on PLZT Ceramic [...]

The anomalous photovoltaic effect (APE) in ferroelectric thin films has been utilized for the development of an optical micro-detector active in the visible range (from 350 to 800 nm). La-doped Pb(Zr,Ti)O(3) (PLZT) ferroelectric films epitaxially grown on Pt(001)/Mg(001) substrate were fabricated into micro-detector arrays and characterized as to their optical response. The Au/PLZT/Pt/MgO devic...

Enhanced functionality of electro-optic devices by implementing piezoelectric micro fibers into their construction is proposed. Lanthanum-modified lead zirconate titanate (PLZT) ceramics are known to exhibit high light transparency, desirable electro-optic properties and fast response. In this study PLZT fibers with a diameter of around 300 microns were produced by a thermoplastic processing m...