In this work, we describe the homoand hetero-epitaxial growth of hexagonal and cubic MgxZn1−xO thin films on lattice matched substrates of c-Al2O3, ZnO, MgO and SrTiO3. The crystalline quality, composition and epitaxial nature of the alloy films are obtained by x-ray diffraction and Rutherford backscattering spectroscopy (RBS) techniques. The RBS channeling yields are in the range 3–8% for homo...

A vapor cooling condensation system was used to deposit high quality intrinsic ZnO thin films and intrinsic ZnO nanorods as the sensing membrane of extended-gate field-effect-transistor (EGFET) glucose biosensors. The sensing sensitivity of the resulting glucose biosensors operated in the linear range was 13.4 μA mM(-1) cm(-2). To improve the sensing sensitivity of the ZnO-based glucose biosens...

cu(in,ga)se2 thin films (cigs) on metallic substrate (titanium, molybdenum, aluminum, stainless steel) were prepared by a two-step selenization of co-evaporated metallic precursors in se-containing environment under n2 gas flow. structural properties of prepared thin film were studied. to characterize the optical quality and intrinsic defect nature low-temperature photoluminescence, were perfor...

Cu(In,Ga)Se2 thin films (CIGS) on metallic substrate (titanium, molybdenum, aluminum, stainless steel) were prepared by a two-step selenization of Co-evaporated metallic precursors in Se-containing environment under N2 gas flow. Structural properties of prepared thin film were studied. To characterize the optical quality and intrinsic defect nature low-temperature photoluminescence, were perfor...

The optical properties of lead zirconate titanate (PZT) thin films deposited on ZnO were studied by m-lines spectroscopy. In order to retrieve the refractive index and the thickness of both layers from the m-lines spectra, we develop a numerical algorithm for the case of a two-layer system and show its robustness in the presence of noise. The sensitivity of the algorithm of the two-layer model ...

ZnO thin films of porous structure with strong c-axis orientation were deposited on n-type silicon substrate by pulsed laser ablation of ZnO target in low O2 pressure (around 0.03 mbar) and at 600C substrate temperature. We attribute the formation of nanopores and the crater-like formation to the high kinetic energy of the ablated particles. Photoluminescence spectra show the near band edge emi...

This study addresses the optical and electrical properties of ZnO thin films doped with Al, V and Nb (ZnO:Al, ZnO:V and ZnO:Nb, respectively) deposited by r.f. magnetron sputtering in Ar atmosphere. The films are deposited on glass substrates without heating and heated at 100C, 150C and 275C. The optical spectra of transmittance and reflectance are measured and the optical band gap of the films...

A simplified Cu(In,Ga)(S, Se)2/Zn(O, S)/ZnO:Al stack for chalcopyrite thin-film solar cells is proposed. In this stack the Zn(O, S) layer combines the roles of the traditional CdS buffer and undoped ZnO layers. It will be shown that Zn(O, S) films can be sputtered in argon atmosphere from a single mixed target without substrate heating. The photovoltaic performance of the simplified stack match...

In this work, we report on the structure study of electrodeposited ZnO nanowires. The samples were mounted as a working electrode and the deposition was performed in a classical three electrodes electrochemical cell. For obtaining ZnO nanowires, the working electrode was a polycarbonate membrane with a random distribution of nanometric pores, gilded one side to ensure electric contact. The morp...

Thin film of zinc oxide (ZnO) has widely applied in many devices, such as solar cells[1], photoelectric devices[2], ferroelectric devices[3] owing to two most important properties: the direct wide bandgap of 3.37 eV at room temperature[4], and the large exciton binding energy of 60 meV[5]. As reported in the literature, the ZnO thin films have been prepared by various techniques, such as sol-ge...